Abstract
In this paper, we explore the possibility of finding practical applications when the nonlinear current–voltage (I–V) characteristics of a varistor are modified by the application of external magnetic fields. With this goal in mind, varistors based on a pseudobrookite oxide semiconductor have been studied. Pseudobrookite (PsB) is a wide bandgap n-type semiconductor with the bandgap of 2.77 eV. It is also weakly ferromagnetic. The “voltage-dependent resistor” (VDR) mode of the magnetically-tuned pseudobrookite varistors offers an opportunity to advance magnetic sensor technology. The resistive and magnetoresistive parameters of PsB VDRs exhibit good responses to applied magnetic fields and they can therefore be the basis for the fabrication of simple yet practical magnetic sensors. These sensors can cover the range of magnetic fields between 0 and 4500 Oe with good accuracy, and could possibly be considered as a substitute for Hall Effect-based sensors for many applications. Also, due to their simple structure, they would be rugged and not susceptible to abuses. They may also be suitable for applications in hazardous environments such as high temperatures and atmospheres having the presence of radiation, such as neutrons, protons, etc. It is also possible that these novel sensors could be suitable for geological applications such as in well logging in search of energy sources.
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Acknowledgements
We acknowledge the support of the National Science Foundation (NSF), Grant # ECCS-1025395. We also thank Professor Wim Geerts of the Department of Physics at Texas State University for allowing us the extensive use of his semiconductor characterization laboratory.
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Pandey, R.K., Stapleton, W.A., Sutanto, I. et al. Voltage-Biased Magnetic Sensors Based on Tuned Varistors. J. Electron. Mater. 44, 1100–1109 (2015). https://doi.org/10.1007/s11664-015-3632-9
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DOI: https://doi.org/10.1007/s11664-015-3632-9