Abstract
Zinc oxide-based varistors are nonlinear voltage-dependent ceramic resistors used to suppress and limit transient voltage surges. However, due to their structural inhomogeneity, current concentration may come into existence, which causes thermal stress in local areas that even may destroy the components. As a result, these elements lose their reliability and ability to protect. In this study, the effect of structural inhomogeneity on their electrical properties was analyzed and demonstrated. This analysis contributes to a deeper understanding of the impact of structural inhomogeneity on their performance in terms of surge energy absorption capability. In addition, to make a technological contribution, experiments using the classical proceeding were carried out to identify the optimal proportions for the following oxides (Bi2O3, Nb2O5, MnO2, Co3O4, Cr2O3, NiO, Ce2O3, La2O3). Using the optimal proportions of the oxides, a new ZnO varistor was manufactured. Characterization of the manufactured new varistor showed that it has a low inhomogeneity factor β = 0.11 and a high nonlinear coefficient α = 100 ± 1. This demonstrates that the manufactured varistor has a reasonable structural homogeneity, which allows for a uniform distribution of the current passing through it. For further evidence, the new varistor was shocked by 8/20 μs regular high pulses with a current of 15KA and a voltage of 3 kV for each pulse. No puncture failure was observed, which indicates its ability to absorb excess voltage.
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References
Al-Abdul, Khalaf. 1991. 'Contribution à l'étude du comportement des varistances à base d'oxyde de zinc, par la mesure des impédances complexes à basse et à moyenne fréquences', Toulouse.
K. Al-Abdullah, Elaboration of ZnO based varistors and the effect of the rare-earths on their electrical behaviour. Energy Procedia 19, 116–127 (2012)
Batal, MA, G Nashed, and Fares Haj %J Latin-American Journal of Physics Education Jneed. 2012. 'Electrical properties of nanostructure tin oxide thin film doped with copper prepared by Sol-Gel method', 6: 311–16.
J. Bernasconi, H.P. Klein, B. Knecht, S. Strässler, Investigation of various models for metal oxide varistors. J. Electron. Mater. 5, 473–495 (1976)
D. Bremecker, P. Keil, M. Gehringer, D. Isaia, J. Rödel, T. Frömling, Mechanically tuned conductivity at individual grain boundaries in polycrystalline ZnO varistor ceramics. J. Appl. Phys. 127, 034101 (2020)
M. Chawla, N. Shekhawat, S. Aggarwal, A. Sharma, K.G.M. Nair, Cole-cole analysis and electrical conduction mechanism of N+ implanted polycarbonate. J. Appl. Phys. 115, 18410 (2014)
F. Cui, Xu. Zhijun, R. Chu, G. Li, Improving electrical properties of ZnO–Bi2O3–Sb2O3–MnO2 varistors by doping with pre-synthesized Bi–Si–O phase. J. Alloy. Compd. 836, 154692 (2020)
R. Danzer, B. Kaufmann, P. Supancic, Failure of high power varistor ceramic components. J. Eur. Ceram. Soc. 40, 3766–3770 (2020)
K. Eda, Zinc oxide varistors. IEEE Electr. Insul. Mag. 5, 28–30 (1989)
R. Einzinger, Metal oxide varistors. Annu. Rev. Mater. Sci. 17, 299–321 (1987)
R. Einzinger, Metal oxide varistor action -a homojunction breakdown mechanism. Appl. Surf. Sci. 1, 329–340 (1978)
Fang, Z., B. Wang, and Z. Fu. 2020. "Failure Modes and Energy Handling Capability of ZnO Varistors with Different Electrode Edge Margins Stressed by Current Impulses." In 2020 IEEE International Conference on High Voltage Engineering and Application (ICHVE), 1–4.
A. Goswami, A.P. Goswami, Dielectric and optical properties of ZnS films. Thin Solid Films 16, 175–185 (1973)
Gould, RD, and M %J Superficies y vacio Din. 1999. 'Capacitance Variations in Cd3As2 Thin Film Sandwich Structures': 230–33.
T.K. Gupta, Application of Zinc Oxide Varistors. J. Am. Ceram. Soc. 73, 1817–1840 (1990)
He, J., J. Hu, and Q. Chen. 2006. "Microstructure Simulation on Puncturing Phenomenon of ZnO Varistor under High Current." In 2006 IEEE 8th International Conference on Properties & applications of Dielectric Materials, 959–62.
He, Jinliang. 2019a. 'Conduction Mechanisms of ZnO Varistors.' in, Metal Oxide Varistors.
He, Jinliang 2019b. 'Introduction of Varistor Ceramics.' in, Metal Oxide Varistors.
He, Jinliang. 2019c. 'Microstructural Electrical Characteristics of ZnO Varistors.' in, Metal Oxide Varistors.
Y. He, B. Wei, Z. Fu, M. Dai, J. Liu, MOV failure modes and microstructural characteristics under operating duty tests with multiwaveform multipulse currents. IEEE Trans. Power Delivery 33, 2274–2283 (2018)
Hu, J., J. Liu, J. He, W. Long, and F. Luo. 2009. "Residual voltage properties of ZnO varistors doped with Y2O3 for high voltage gradient." In 2009 IEEE 9th International Conference on the Properties and Applications of Dielectric Materials, 1154–57.
W. Huang, L. Chai, Z. Li, X. Yang, N. Guo, Bo. Song, Evolution of microstructure and grain boundary character distribution of a tin bronze annealed at different temperatures. Mater. Charact. 114, 204–210 (2016)
A. Izoulet, S. Guillemet-Fritsch, C. Estournès, J. Morel, Microstructure control to reduce leakage current of medium and high voltage ceramic varistors based on doped ZnO. J. Eur. Ceram. Soc. 34, 3707–3714 (2014)
Li. Ji-le, G.-H. Chen, C.-L. Yuan, Microstructure and electrical properties of rare earth doped ZnO-based varistor ceramics. Ceram. Int. 39, 2231–2237 (2013)
He. Jinliang, Z. Rong, C. Qingheng, C. Shuiming, G. Zhicheng, H. Se-Won, C. Han-Goo, Nonuniformity of electrical Characteristics in microstructures of ZnO surge varistors. IEEE Trans. Power Delivery 19, 138–144 (2004)
K. Kang, J. Yan, J. Zhang, Du. Jinghong, J. Yi, Y. Liu, R. Bao, S. Tan, G. Gan, (Ge, GeO2, Ta2O5, BaCO3) co-doping TiO2 varistor ceramics. J. Alloy. Compd. 649, 1280–1290 (2015)
B. Kaufmann, T. Billovits, M. Kratzer, C. Teichert, P. Supancic, A modelling approach to describe the DC current-voltage behaviour of low-voltage zinc oxide varistors. Open Ceramics 6, 100113 (2021)
J.T.C. van Kemenade, R.K. Eijnthoven, Direct determination of barrier voltage in ZnO varistors. J. Appl. Phys. 50, 938–941 (1979)
O.L. Krivanek, P. Williams, Y.-C. Lin, Direct observation of voltage barriers in ZnO varistors. Appl. Phys. Lett. 34, 805–806 (1979)
Kudla, A., and D. Brzezinska. 1999. "Photoelectric methods of potential barrier heights determination in the MOS structure." In IMTC/99. Proceedings of the 16th IEEE Instrumentation and Measurement Technology Conference (Cat. No.99CH36309), 1934–37 vol.3.
Lee, Sang-Ki, Sung-Gurl Cho, and Young-Jae J The Korean Journal of Ceramics Shim. 1999. 'Characteristics of ZnO Varistors with Praseodymium Oxide', 5: 357–62.
Levinson, L., and H. J American Ceramic Society Bulletin Philipp. 1986. 'Zinc oxide varistors a review', 65: 639–46.
L.M. Levinson, H.R. Philipp, The physics of metal oxide varistors. J. Appl. Phys. 46, 1332–1341 (1975)
X. Liao, Pu. Yong, D. Zhu, Synergistic effect of co-doping of nano-sized ZnO and Nb2O5 on the enhanced nonlinear coefficient of TiO2 varistor with low breakdown voltage. J. Alloys Comp. 886, 161170 (2021)
G.D. Mahan, L.M. Levinson, H.R. Philipp, Theory of conduction in ZnO varistors. J. Appl. Phys. 50, 2799–2812 (1979)
P. Meng, Gu. Shanqiang, J. Wang, Hu. Jun, J. He, Improving electrical properties of multiple dopant ZnO varistor by doping with indium and gallium. Ceram. Int. 44, 1168–1171 (2018)
P. Meng, C. Yuan, Xu. Heng, S. Wan, Q. Xie, J. He, H. Zhao, Hu. Jun, J. He, Improving the protective effect of surge arresters by optimizing the electrical property of ZnO varistors. Electric. Power. Sys. Res. 178, 106041 (2020)
P. Meng, X. Zhao, X. Yang, Wu. Jinbo, Q. Xie, J. He, Hu. Jun, J. He, Breakdown phenomenon of ZnO varistors caused by non-uniform distribution of internal pores. J. Eur. Ceram. Soc. 39, 4824–4830 (2019)
Morales-Masis, Monica. 2007. 'Fabrication and Study of ZnO Micro- and Nanostructures', Wright State University.
W.G. Morris, Physical properties of the electrical barriers in varistors. J. Vaccum. Sci. Technol. 13, 926–931 (1976)
C.-W. Nahm, Nb2O5 doping effect on electrical properties of ZnO–V2O5–Mn3O4 varistor ceramics. Ceram. Int. 38, 5281–5285 (2012)
C.-W. Nahm, The nonlinear properties and stability of ZnO-Pr6O11-CoO-Cr2O3-Er2O3 ceramic varistors. Mater. Lett. 47, 182–187 (2001)
Nan, Ce-Wen, and David R. Clarke. 1996. 'Effect of Variations in Grain Size and Grain Boundary Barrier Heights on the Current- Voltage Characteristics of ZnO Varistors', 79: 3185–92.
E. Olsson, G.L. Dunlop, Characterization of individual interfacial barriers in a ZnO varistor material. J. Appl. Phys. 66, 3666–3675 (1989)
F. Peng, D. Zhu, Effect of sintering temperature and Ho2O3 on the properties of TiO2-based varistors. Ceram. Int. 44, 21034–21039 (2018)
R. Puigdollers, P.S. Antonio, S. Tosoni, G. Pacchioni, Increasing Oxide reducibility: the role of metal/oxide interfaces in the formation of oxygen vacancies. ACS Catal. 7, 6493–6513 (2017)
P.S. Sahoo, A. Panigrahi, S.K. Patri, R.N.P. Choudhary, Impedance spectroscopy of Ba3Sr2DyTi3V7O30 ceramic. Bull. Mater. Sci. 33, 129–134 (2010)
F. Stucki, P. Brüesch, F. Greuter, Electron spectroscopic studies of electrically active grain boundaries in ZnO. Surf. Sci. 189–190, 294–299 (1987)
H.-T. Sun, L.-Y. Zhang, Xi. Yao, Electrical nonuniformity of grain boundaries within ZnO varistors. J. Am. Ceram. Soc. 76, 1150–1155 (1993)
Sweetana, A, T Gupta, W Carlson, R Grekila, N Kunkle, and J Osterhout. 1983. "Gapless surge arresters for power systems applications. Volume 1. Development of 500-and 1200-kV arresters. Final report." In.: Westinghouse Electric Corp., Bloomington, IN (USA). Distribution Apparatus Div.
M. Tao, O. Bui Ai, Dorlanne, and A. Loubiere., Different ‘“single grain junctions”’ within a ZnO varistor. J. Appl Phys. 61, 1562–1567 (1987)
Tu, Y., L. Ding, J. He, J. Hu, and R. Zeng. 2006. "Effect of Nonuniformities of Microstructure and Electrical Property of Grain Boundary to the Global Electrical Characteristics." In 2006 IEEE 8th International Conference on Properties & applications of Dielectric Materials, 95–98.
A. Vojta, D.R. Clarke, Microstructural origin of current localization and “puncture’’ failure in varistor ceramics. J. Appl. Phys. 81, 985–993 (1997)
H. Wang, S. Qi, Y. Zhou, H. Zhao, An economical dopant for improving the comprehensive electrical properties of ZnO varistor ceramics. Mater. Lett. 279, 128471 (2020)
H. Wang, W. Li, J.F. Cordaro, Single junctions in ZnO varistors studied by current-voltage characteristics and deep level transient spectroscopy. Jpn. J. Appl. Phys. 34, 1765–1771 (1995)
H. Wang, W.A. Schulze, J.F. Cordaro, Averaging effect on current-voltage characteristics of ZnO varistors. Jpn. J. Appl. Phys. 34, 2352–2358 (1995)
J. Wong, Barrier voltage measurement in metal oxide varistors. J. Appl. Phys. 47, 4971–4974 (1976)
D. Xu, X.N. Cheng, M.S. Wang, L.Y. Shi, Microstructure and electrical properties of La2O3-Doped ZnO-Bi2O3 based varistor ceramics. Adv. Mater. Res. 79–82, 2007–2010 (2009)
H.N. Yoshimura, A.L. Molisani, N.E. Narita, J.L.A. Manholetti, J.M. Cavenaghi, Mechanical properties and microstructure of zinc oxide varistor ceramics. Mater. Sci. Forum 530–531, 408–413 (2006)
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Alhaj Omar, F. The role of oxide optimization in improving the electrical properties of ZnO varistors. J Mater Sci: Mater Electron 32, 28553–28572 (2021). https://doi.org/10.1007/s10854-021-07234-1
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DOI: https://doi.org/10.1007/s10854-021-07234-1