Skip to main content
Log in

Preparation and Thermoelectric Properties of n-Type Bi2Te2.7Se0.3:D m

  • Published:
Journal of Electronic Materials Aims and scope Submit manuscript

Abstract

Bismuth chalcogenides such as p-type (Bi,Sb)2Te3 and n-type Bi2(Te,Se)3 are excellent thermoelectric materials near room temperature. They can form homogeneous solid solutions because Bi2Te3, Sb2Te3, and Bi2Se3 have the same class of crystal symmetry. The thermoelectric figure of merit can be improved by increasing the power factor through doping and/or by reducing the thermal conductivity by forming a solid solution. In this study, n-type Bi2Te2.7Se0.3:D m (D: dopant such as I, Cu, Ag) solid solutions were prepared by encapsulated melting and hot pressing. The undoped solid solution had a power factor (PF) of 1.71 mW m−1 K−1 at 323 K and a figure of merit (ZT) of 0.55 at 423 K. The ZT value was improved due to the increased PF by I or Cu doping, and maximum ZT values were obtained as 1.13 for Bi2Te2.7Se0.3:I0.0075 and 0.74 for Bi2Te2.7Se0.3:Cu0.01 at 423 K. However, the thermoelectric properties of Ag-doped Bi2Te2.7Se0.3 solid solutions barely improved.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. W.J. Xie, J. He, H.J. Kang, X.F. Tang, S. Zhu, M. Laver, S.Y. Wang, J.R.D. Copley, C.M. Brown, Q.J. Zhang, and T.M. Tritt, Nano Lett. 10, 3283 (2010).

    Article  Google Scholar 

  2. R. Venkatasubramanian, E. Siiwvola, T. Colpitts, and B. O’Quinn, Nature 413, 597 (2001).

    Article  Google Scholar 

  3. Y.C. Lan, A.J. Minnich, G. Chen, and Z.F. Ren, Adv. Funct. Mater. 20, 357 (2010).

    Article  Google Scholar 

  4. S. Wang, W. Xie, H. Li, and X. Tang, Intermetallics 19, 1024 (2011).

    Article  Google Scholar 

  5. F. Li, X. Huang, Z. Sun, J. Ding, J. Jiang, W. Jiang, and L. Chen, J. Alloys Compd. 509, 4769 (2001).

    Article  Google Scholar 

  6. J.R. Drabble and C.H.L. Goodman, J. Phys. Chem. Solids 5, 142 (1958).

    Article  Google Scholar 

  7. L.V. Prokofieva, D.A. Pshenay-Severin, P.P. Konstantinov, and A.A. Shabaldin, Semiconductor 43, 976 (2009).

    Google Scholar 

  8. N. Keawprak, S. Lao-ubol, C. Eamchotchawalit, and Z.M. Sun, J. Alloys Compd. 509, 9301 (2011).

    Google Scholar 

  9. G. Kavei and M.A. Karami, Mater. Res. Bull. 43, 239 (2008).

    Article  Google Scholar 

  10. X.F. Tang, W.J. Xie, H. Li, W.Y. Zhao, and Q.J. Zhang, J. Appl. Phys. Lett. 90, 012102 (2007).

    Article  Google Scholar 

  11. M. Ferhat, G. Brun, J.C. Tedenac, M. Nouaoura, and L. Lassabatere, J. Cryst. Growth 167, 122 (1996).

    Article  Google Scholar 

  12. S.K. Lee, T.S. Oh, D.B. Hyun, and C.W. Hwang, Met. Mater. Int. 6, 67 (2000).

    Article  Google Scholar 

  13. O.B. Sokolov, S.Y. Skipidarov, N.I. Duvankov, and G.G. Shabunina, J. Cryst. Growth 262, 442 (2004).

    Article  Google Scholar 

  14. J. Yang, R. Chen, X.A. Fan, S. Bao, and W. Zhu, J. Alloys Compd. 407, 330 (2006).

    Article  Google Scholar 

  15. M.S. Dresselhaus, G. Chen, M.Y. Tang, R.G. Yang, H. Lee, D.Z. Wang, Z.F. Ren, J.P. Fleurial, and P. Gogna, Adv. Mater. 19, 1043 (2007).

    Article  Google Scholar 

  16. G.Q. Zhang, Q.X. Yu, W. Wang, and X.G. Li, Adv. Mater. 22, 1959 (2010).

    Article  Google Scholar 

  17. W.L. Ren, C.X. Cheng, Y.B. Xu, Z.M. Ren, and Y.B. Zhong, J. Alloys Compd. 501, 120 (2010).

    Article  Google Scholar 

  18. N.K. Abrikosov, V.F. Bankina, L.V. Poretskaya, L.E. Shelimova, and E.V. Skudnova, Semiconducting II–VI, IV–VI and V-VI Compounds (New York: Plenum, 1969).

    Book  Google Scholar 

  19. S. Wang, H. Li, R. Lu, G. Zheng, and X. Tang, Nanotechnology 24, 285702 (2013).

    Article  Google Scholar 

  20. J.L. Cui, L.D. Mao, W. Yang, X.B. Xu, D.Y. Chen, and W.J. Xiu, J. Sol. Stat. Chem. 180, 3583 (2007).

    Article  Google Scholar 

  21. G.E. Lee, I.H. Kim, Y.S. Lim, W.S. Seo, B.J. Choi, and C.W. Hwang, J. Electron. Mater. (published online: 29 October 2013).

  22. H.J. Goldsmid, Proc. 5th Intl. Conf. Phys. Semicon. 1015 (1960).

  23. H. Scherrer and S. Scherrer, Thermoelectrics Handbook, edited by D. M. Lowe (London: CRC Press, 2006).

  24. X. Zhang, X.Y. Ma, Q.M. Lu, F.P. Zhang, Y.Q. Liu, J.X. Zhang, and L. Wang, J. Electron. Mater. 40, 5 (2011).

    Google Scholar 

  25. J. Przyluski and K. Borkowski, Proc. 4th Intl. Conf. Thermoelectric Energy Conversion, Arlington (1982).

  26. S. Wang, G. Tan, W. Xie, G. Zheng, H. Li, J. Yang, and X. Tang, J. Mater. Chem. 22, 20943 (2012).

    Article  Google Scholar 

  27. W.S. Liu, Q. Zhang, Y. Lan, S. Chen, X. Yan, H. Wang, D. Wang, G. Chen, and Z. Ren, Adv. Energy Mater. 1, 577 (2011).

    Article  Google Scholar 

  28. I.H. Kim, S.M. Choi, W.S. Seo, and D.I. Cheong, J. Nanosci. Nanotechnol. 13, 3660 (2013).

    Article  Google Scholar 

  29. S.V. Faleev and F. Leonard, Phys. Rev. B 77, 21304 (2008).

    Article  Google Scholar 

  30. X.Y. Li, L.D. Chen, J.F. Fan, W.B. Zhang, T. Kawahara, and T. Hirai, J. Appl. Phys. 98, 083702 (2005).

    Article  Google Scholar 

  31. J.R. Sootman, D.Y. Chung, and M.G. Kanatzidis, Angew. Chem. Int. Ed. 48, 8616 (2009).

    Article  Google Scholar 

  32. J. Jiang, L. Chen, Q. Yao, S. Bai, and Q. Wang, Mater. Chem. Phys. 92, 39 (2005).

    Article  Google Scholar 

  33. H. Cailat, A. Borshchevsky, and J.P. Fleurial, J. Appl. Phys. 80, 4442 (1996).

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to Il-Ho Kim.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Lee, GE., Eum, AY., Song, KM. et al. Preparation and Thermoelectric Properties of n-Type Bi2Te2.7Se0.3:D m . J. Electron. Mater. 44, 1579–1584 (2015). https://doi.org/10.1007/s11664-014-3485-7

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s11664-014-3485-7

Keywords

Navigation