Abstract
Bismuth chalcogenides such as p-type (Bi,Sb)2Te3 and n-type Bi2(Te,Se)3 are excellent thermoelectric materials near room temperature. They can form homogeneous solid solutions because Bi2Te3, Sb2Te3, and Bi2Se3 have the same class of crystal symmetry. The thermoelectric figure of merit can be improved by increasing the power factor through doping and/or by reducing the thermal conductivity by forming a solid solution. In this study, n-type Bi2Te2.7Se0.3:D m (D: dopant such as I, Cu, Ag) solid solutions were prepared by encapsulated melting and hot pressing. The undoped solid solution had a power factor (PF) of 1.71 mW m−1 K−1 at 323 K and a figure of merit (ZT) of 0.55 at 423 K. The ZT value was improved due to the increased PF by I or Cu doping, and maximum ZT values were obtained as 1.13 for Bi2Te2.7Se0.3:I0.0075 and 0.74 for Bi2Te2.7Se0.3:Cu0.01 at 423 K. However, the thermoelectric properties of Ag-doped Bi2Te2.7Se0.3 solid solutions barely improved.
Similar content being viewed by others
References
W.J. Xie, J. He, H.J. Kang, X.F. Tang, S. Zhu, M. Laver, S.Y. Wang, J.R.D. Copley, C.M. Brown, Q.J. Zhang, and T.M. Tritt, Nano Lett. 10, 3283 (2010).
R. Venkatasubramanian, E. Siiwvola, T. Colpitts, and B. O’Quinn, Nature 413, 597 (2001).
Y.C. Lan, A.J. Minnich, G. Chen, and Z.F. Ren, Adv. Funct. Mater. 20, 357 (2010).
S. Wang, W. Xie, H. Li, and X. Tang, Intermetallics 19, 1024 (2011).
F. Li, X. Huang, Z. Sun, J. Ding, J. Jiang, W. Jiang, and L. Chen, J. Alloys Compd. 509, 4769 (2001).
J.R. Drabble and C.H.L. Goodman, J. Phys. Chem. Solids 5, 142 (1958).
L.V. Prokofieva, D.A. Pshenay-Severin, P.P. Konstantinov, and A.A. Shabaldin, Semiconductor 43, 976 (2009).
N. Keawprak, S. Lao-ubol, C. Eamchotchawalit, and Z.M. Sun, J. Alloys Compd. 509, 9301 (2011).
G. Kavei and M.A. Karami, Mater. Res. Bull. 43, 239 (2008).
X.F. Tang, W.J. Xie, H. Li, W.Y. Zhao, and Q.J. Zhang, J. Appl. Phys. Lett. 90, 012102 (2007).
M. Ferhat, G. Brun, J.C. Tedenac, M. Nouaoura, and L. Lassabatere, J. Cryst. Growth 167, 122 (1996).
S.K. Lee, T.S. Oh, D.B. Hyun, and C.W. Hwang, Met. Mater. Int. 6, 67 (2000).
O.B. Sokolov, S.Y. Skipidarov, N.I. Duvankov, and G.G. Shabunina, J. Cryst. Growth 262, 442 (2004).
J. Yang, R. Chen, X.A. Fan, S. Bao, and W. Zhu, J. Alloys Compd. 407, 330 (2006).
M.S. Dresselhaus, G. Chen, M.Y. Tang, R.G. Yang, H. Lee, D.Z. Wang, Z.F. Ren, J.P. Fleurial, and P. Gogna, Adv. Mater. 19, 1043 (2007).
G.Q. Zhang, Q.X. Yu, W. Wang, and X.G. Li, Adv. Mater. 22, 1959 (2010).
W.L. Ren, C.X. Cheng, Y.B. Xu, Z.M. Ren, and Y.B. Zhong, J. Alloys Compd. 501, 120 (2010).
N.K. Abrikosov, V.F. Bankina, L.V. Poretskaya, L.E. Shelimova, and E.V. Skudnova, Semiconducting II–VI, IV–VI and V-VI Compounds (New York: Plenum, 1969).
S. Wang, H. Li, R. Lu, G. Zheng, and X. Tang, Nanotechnology 24, 285702 (2013).
J.L. Cui, L.D. Mao, W. Yang, X.B. Xu, D.Y. Chen, and W.J. Xiu, J. Sol. Stat. Chem. 180, 3583 (2007).
G.E. Lee, I.H. Kim, Y.S. Lim, W.S. Seo, B.J. Choi, and C.W. Hwang, J. Electron. Mater. (published online: 29 October 2013).
H.J. Goldsmid, Proc. 5th Intl. Conf. Phys. Semicon. 1015 (1960).
H. Scherrer and S. Scherrer, Thermoelectrics Handbook, edited by D. M. Lowe (London: CRC Press, 2006).
X. Zhang, X.Y. Ma, Q.M. Lu, F.P. Zhang, Y.Q. Liu, J.X. Zhang, and L. Wang, J. Electron. Mater. 40, 5 (2011).
J. Przyluski and K. Borkowski, Proc. 4th Intl. Conf. Thermoelectric Energy Conversion, Arlington (1982).
S. Wang, G. Tan, W. Xie, G. Zheng, H. Li, J. Yang, and X. Tang, J. Mater. Chem. 22, 20943 (2012).
W.S. Liu, Q. Zhang, Y. Lan, S. Chen, X. Yan, H. Wang, D. Wang, G. Chen, and Z. Ren, Adv. Energy Mater. 1, 577 (2011).
I.H. Kim, S.M. Choi, W.S. Seo, and D.I. Cheong, J. Nanosci. Nanotechnol. 13, 3660 (2013).
S.V. Faleev and F. Leonard, Phys. Rev. B 77, 21304 (2008).
X.Y. Li, L.D. Chen, J.F. Fan, W.B. Zhang, T. Kawahara, and T. Hirai, J. Appl. Phys. 98, 083702 (2005).
J.R. Sootman, D.Y. Chung, and M.G. Kanatzidis, Angew. Chem. Int. Ed. 48, 8616 (2009).
J. Jiang, L. Chen, Q. Yao, S. Bai, and Q. Wang, Mater. Chem. Phys. 92, 39 (2005).
H. Cailat, A. Borshchevsky, and J.P. Fleurial, J. Appl. Phys. 80, 4442 (1996).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Lee, GE., Eum, AY., Song, KM. et al. Preparation and Thermoelectric Properties of n-Type Bi2Te2.7Se0.3:D m . J. Electron. Mater. 44, 1579–1584 (2015). https://doi.org/10.1007/s11664-014-3485-7
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11664-014-3485-7