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Preparation and thermoelectric properties of iodine-doped Bi2Te3-Bi2Se3 solid solutions

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Abstract

Bismuth chalcogenides, such as p-type (Bi,Sb)2Te3 and n-type Bi2(Te,Se)3, are known to have excellent thermoelectric properties at temperatures near room temperature. Since Bi2Te3, Sb2Te3 and Bi2Se3 have the same class of crystal symmetry, they can form homogeneous solid solutions. The thermoelectric figure of merit can be improved by increasing the power factor through doping to optimize the carrier concentration and/or by reducing the thermal conductivity through the formation of solid solutions for phonon scattering. In this study, n-type Bi2Te2.7Se0.3:I m (m = 0.0 − 0.015) solid solutions were successfully prepared by using encapsulated melting and hot pressing. The increase in the carrier concentration induced by I doping led to an increase in both the electrical conductivity and the electronic thermal conductivity, with I atoms acting as phonon scattering centers reducing the lattice thermal conductivity. The undoped solid solution had a carrier concentration of 6.27 × 1019 cm−3, a power factor (PF) of 1.71 mWm−1K−2, and a dimensionless figure of merit (ZT) of 0.54 at 323 K. However, the ZT value was improved by I doping due to the increased PF, demonstrating a maximum of ZT = 1.13 at 423 K for Bi2Te2.7Se0.3:I0.0075.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, Korea National University of Transportation, Chungju, 380-702, Korea

    Go-Eun Lee & Il-Ho Kim

  2. Energy and Environmental Materials Division, Korea Institute of Ceramic Engineering and Technology, Seoul, 153-801, Korea

    Young Soo Lim & Won-Seon Seo

  3. SEEPEL Co., Ltd., Gunpo, Gyeonggi, 435-040, Korea

    Byeong-Jun Choi & Chang-Won Hwang

Authors
  1. Go-Eun Lee
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  2. Il-Ho Kim
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  3. Young Soo Lim
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  4. Won-Seon Seo
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  6. Chang-Won Hwang
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Correspondence to Il-Ho Kim.

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Lee, GE., Kim, IH., Lim, Y.S. et al. Preparation and thermoelectric properties of iodine-doped Bi2Te3-Bi2Se3 solid solutions. Journal of the Korean Physical Society 65, 696–701 (2014). https://doi.org/10.3938/jkps.65.696

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  • DOI: https://doi.org/10.3938/jkps.65.696

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