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Effect of Hydrogen in Size-Limited Growth of Graphene by Atmospheric Pressure Chemical Vapor Deposition

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Analysis of graphene domain synthesis explains the main graphene growth process. Size-limited graphene growth caused by hydrogen is studied to achieve efficient graphene synthesis. Graphene synthesis on Cu foils via the chemical vapor deposition method using methane as carbon source is limited by high hydrogen concentration. Results indicate that hydrogen affects graphene nucleation, the growth rate, and the final domain size. Considering the role of hydrogen as both activator and etching reagent, we build a model to explain the cause of this low graphene growth rate for high hydrogen partial pressure. A two-step method is proposed to control the graphene nucleation and growth rate separately. Half the time is required to obtain similar domain size compared with single-step synthesis, indicating improved graphene synthesis efficiency. The change of the partial pressure and transmission time between the two steps is a factor that cannot be ignored to control the graphene growth.

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Acknowledgements

This work was supported by National Science and Technology Major Project (Grant No. 2011ZX02707), National Natural Science Foundation of China (No. 61136005), Chinese Academy of Sciences (Grant No. KGZD-EW-303), and Shanghai Government (Grant No. 12JC1403900 and 12JC1410100).

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Authors and Affiliations

  1. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, People’s Republic of China

    Haoran Zhang, Yanhui Zhang, Zhiying Chen, Yanping Sui, Yaqian Zhang, Chunmiao Tang, Bo Zhu, Xiaoming Xie & Guanghui Yu

  2. School of Physics and Optoelectronic Technology, Dalian University of Technology, 2 Linggong Road, Dalian, 116024, People’s Republic of China

    Bin Wang

  3. Microwave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, 3 West Beitucheng Road, Beijing, 100029, People’s Republic of China

    Zhi Jin & Xinyu Liu

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  1. Haoran Zhang
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Correspondence to Guanghui Yu.

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Zhang, H., Zhang, Y., Wang, B. et al. Effect of Hydrogen in Size-Limited Growth of Graphene by Atmospheric Pressure Chemical Vapor Deposition. J. Electron. Mater. 44, 79–86 (2015). https://doi.org/10.1007/s11664-014-3415-8

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  • DOI: https://doi.org/10.1007/s11664-014-3415-8

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