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Effect of intermittent oxygen exposure on chemical vapor deposition of graphene

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Abstract

Chemical vapor deposition is the most proficient method for growing graphene on copper foils due to its scalability, repeatability, and uniformity, etc. Herein, we systematically study the effect of oxygen (O2) exposure on graphene growth. We introduced O2 before and during the growth, and then studied its effects on the morphology, crystallinity, and nucleation density of graphene. We observe that introducing O2 during growth significantly improves the graphene crystallinity while pre-dosing O2 before growth reduces the graphene nucleation density. These studies suggest that intermittent O2 exposure play a significant role in graphene growth, enabling scalable production of high-quality graphene.

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Acknowledgments

This work was supported by the STARnet center C-SPIN (Center for Spintronic Materials, Interfaces and Novel Architectures), through the Semiconductor Research Corporation sponsored by the MARCO (Microelectronics Advanced Research Corporation) and the DARPA (Defense Advanced Research Projects Agency). X-ray photoelectron spectroscopy (XPS) was performed at the Analytical Chemistry Instrumentation Facility (ACIF) of the University of California, Riverside, which receives support from the NSF (National Science Foundation) through the MRI (Major Research Instrumentation) program (DMR-0958796).

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Authors and Affiliations

  1. Materials Science and Engineering Program, University of California, Riverside, CA, 92521, USA

    Selcuk Temiz, Zafer Mutlu, Sina Shahrezaei, Mihrimah Ozkan & Cengiz S. Ozkan

  2. Department of Electrical and Computer Engineering, University of California, Riverside, CA, 92521, USA

    Mihrimah Ozkan

  3. Department of Mechanical Engineering, University of California, Riverside, CA, 92521, USA

    Cengiz S. Ozkan

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  1. Selcuk Temiz
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  2. Zafer Mutlu
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  3. Sina Shahrezaei
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  4. Mihrimah Ozkan
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  5. Cengiz S. Ozkan
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Corresponding author

Correspondence to Cengiz S. Ozkan.

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The supplementary material for this article can be found at https://doi.org/10.1557/mrc.2017.111.

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Temiz, S., Mutlu, Z., Shahrezaei, S. et al. Effect of intermittent oxygen exposure on chemical vapor deposition of graphene. MRS Communications 7, 826–831 (2017). https://doi.org/10.1557/mrc.2017.111

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  • DOI: https://doi.org/10.1557/mrc.2017.111

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