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High Mobility and Stability of Thin-Film Transistors Using Silicon-Doped Amorphous Indium Tin Oxide Semiconductors

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Abstract

We report the fabrication of high-performance thin-film transistors (TFTs) with an amorphous silicon indium tin oxide (a-SITO) channel, which was deposited by cosputtering a silicon dioxide and an indium tin oxide target. The effect of the silicon doping on the device performance and stability of the a-SITO TFTs was investigated. The field-effect mobility and stability under positive bias stress of the a-SITO TFTs with optimized Si content (0.22 at.% Si) dramatically improved to 28.7 cm2/Vs and 1.5 V shift of threshold voltage, respectively, compared with the values (0.72 cm2/Vs and 8.9 V shift) for a-SITO TFTs with 4.22 at.% Si. The role of silicon in a-SITO TFTs is discussed based on various physical and chemical analyses, including x-ray absorption spectroscopy, x-ray photoelectron spectroscopy, and spectroscopic ellipsometry measurements.

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Acknowledgements

This research was partially supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF), funded by the Ministry of Education, Science, and Technology (No. 2012011730 and NRF-2013R1A1A 2A10005186). This work was supported by the IT R&D program of MKE/KETI (Grant No. 10041416, The core technology development of light and space adaptable new mode display for energy saving on 7 in. and 2 W) and also by the Global Frontier R&D Program (2013-073298) of the Center for Hybrid Interface Materials (HIM) funded by the Ministry of Science, ICT, and Future Planning.

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Authors and Affiliations

  1. Division of Materials Science and Engineering, Hanayng University, 222 Wangsimni-ro, Seoul, 133-719, Republic of Korea

    T. W. Seo, Kwang-Ho Lee & Jin-Seong Park

  2. Department of Materials Science and Engineering, Chungnam National University, Daejeon, 305-764, Republic of Korea

    Hyun-Suk Kim

  3. Division of Physics and Semiconductor Science, Dongguk University, Seoul, 100-715, Republic of Korea

    Kwun-Bum Chung

Authors
  1. T. W. Seo
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  2. Hyun-Suk Kim
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  3. Kwang-Ho Lee
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  4. Kwun-Bum Chung
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  5. Jin-Seong Park
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Corresponding authors

Correspondence to Kwun-Bum Chung or Jin-Seong Park.

Additional information

T.W. Seo and Hyun-Suk Kim have contributed equally to this work.

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Seo, T.W., Kim, HS., Lee, KH. et al. High Mobility and Stability of Thin-Film Transistors Using Silicon-Doped Amorphous Indium Tin Oxide Semiconductors. J. Electron. Mater. 43, 3177–3183 (2014). https://doi.org/10.1007/s11664-014-3211-5

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