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Effects of Inductively Coupled Plasma Hydrogen on Long-Wavelength Infrared HgCdTe Photodiodes

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Abstract

Bulk passivation of semiconductors with hydrogen continues to be investigated for its potential to improve device performance. In this work, hydrogen-only inductively coupled plasma (ICP) was used to incorporate hydrogen into long-wavelength infrared HgCdTe photodiodes grown by molecular-beam epitaxy. Fully fabricated devices exposed to ICP showed statistically significant increases in zero-bias impedance values, improved uniformity, and decreased dark currents. HgCdTe photodiodes on Si substrates passivated with amorphous ZnS exhibited reductions in shunt currents, whereas devices on CdZnTe substrates passivated with polycrystalline CdTe exhibited reduced surface leakage, suggesting that hydrogen passivates defects in bulk HgCdTe and in CdTe.

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References

  1. M. Carmody, D. Lee, M. Zandian, J. Phillips, and J. Arias, J. Electron. Mater. 32, 710 (2003).

    Article  CAS  Google Scholar 

  2. M. Carmody, J.G. Pasko, P.D. Edwall, R. Bailey, J. Arias, S. Cabelli, J. Bajaj, L.A. Almeida, J.H. Dinan, M. Groenert, A.J. Stoltz, Y. Chen, G. Brill, and N.K. Dhar, J. Electron. Mater. 34, 832 (2005).

    Article  CAS  Google Scholar 

  3. M.C. Chen and R.A. Schiebel, J. Appl. Phys. 71, 5269 (1992).

    Article  CAS  Google Scholar 

  4. S.J. Pearton, J.W. Corbett, and M. Stavola, Hydrogen in Crystalline Semiconductors. Springer Series in Materials Science, Vol. 16 (Berlin: Springer, 1992).

  5. A.I. Evstigneev, V.F. Kuleshov, G.A. Lubochkova, M.V. Pashkovskii, E.B. Yakimov, and N.A. Yarkin, Sov. Phys. Semicond. 19, 562 (1985).

    Google Scholar 

  6. S.P. Komissarchuk, L.N. Limarenko, and E.P. Lopatinskaya, Narrow Gap Semiconductors and Semimetals (Moscow: LVOV, 1983), p. 126.

  7. H. Jung, H. Lee, and C. Kim, J. Electron. Mater. 25, 1266 (1996).

    Article  CAS  Google Scholar 

  8. Y. Kim, T. Kim, D. Redfern, C. Musca, H. Lee, and C. Kim, J. Electron. Mater. 29, 859 (2000).

    Article  CAS  Google Scholar 

  9. J.K. White, C.A. Musca, H.C. Lee, and L. Faraone, Appl. Phys. Lett. 76, 2448 (2000).

    Article  CAS  Google Scholar 

  10. S.H. Shin, J.M. Arias, D.D. Edwell, M. Zandian, J.G. Pasko, and R.E. DeWames, J. Vac. Sci. Technol. B 10, 1492 (1992).

    Article  CAS  Google Scholar 

  11. V. Gopal and S. Gupta, J. Appl. Phys. 95, 2467 (2004).

    Article  CAS  Google Scholar 

  12. K. Yang, Y. Lee, and H. Lee, Jpn. J. Appl. Phys. 43, L1617 (2004).

    Article  CAS  Google Scholar 

  13. M. Carmody, J.G. Pasko, P.D. Edwall, M. Daraselia, L.A. Almeida, J. Molstad, J.H. Dinan, J.K. Markunas, Y. Chen, G. Brill, and N.K. Dhar, J. Electron. Mater. 33, 531 (2004).

    Article  CAS  Google Scholar 

  14. P. Boieriu, C.H. Grein, J. Garland, S. Velicu, C. Fulk, A. Stoltz, L. Bubulac, J.H. Dinan, and S. Sivananthan, J. Electron. Mater. 35, 1385 (2006).

    Article  CAS  Google Scholar 

  15. T.D. Golding, R. Hellmer, L. Bubulac, J.H. Dinan, L. Wang, W. Zhao, M. Carmody, H.O. Sankur, and D. Edwall, J. Electron. Mater. 35, 1465 (2006).

    Article  CAS  Google Scholar 

  16. A. Stoltz, J.D. Benson, and P.J. Smith, J. Electron. Mater. 38, 1741 (2009).

    Article  CAS  Google Scholar 

  17. T. Simko, V. Martisovits, J. Bretagne, and G. Gousset, Phys. Rev. E 56, 5908 (1997).

    Article  CAS  Google Scholar 

  18. M. Sode, T. Schwarz-Selinger, and W. Jacob, J. Appl. Phys. 113, 093304 (2013).

    Article  Google Scholar 

  19. I. Méndez, F.J. Gordillo-Vázquez, V.J. Herrero, and I. Tanarro, J. Phys. Chem. A 110, 6060 (2006).

    Article  Google Scholar 

  20. I. Tanarro, V.J. Herrero, A.M. Islyaikin, I. Méndez, F.L. Tabarés, and D. Tafalla, J. Phys. Chem. A 111, 9003 (2007).

    Article  CAS  Google Scholar 

  21. A.V. Phelps, J. Phys. Chem. Ref. Data 19, 653 (1990).

    Article  CAS  Google Scholar 

  22. A.T. Hjartarson, E.G. Thorsteinsson, and J.T. Gudmundsson, Plasma Sourc. Sci. Technol. 19, 065008 (2010).

    Article  Google Scholar 

  23. H.F. Schaake, J.H. Tregilgas, A.J. Lewis, and P.M. Everett, J. Vac. Sci. Technol. A 1, 1625 (1983).

    Article  CAS  Google Scholar 

  24. G. Brill, S. Velicu, P. Boieriu, Y. Chen, N.K. Dhar, T.S. Lee, Y. Selamet, and S. Sivananthan, J. Electron. Mater. 30, 717 (2001).

    Article  CAS  Google Scholar 

  25. G.E.P. Box, Ann. Math. Stat. 25, 290 (1954).

    Article  Google Scholar 

  26. R.A. Fisher, Statistical Methods for Research Workers (Edinburgh: Oliver and Boyd, 1925).

  27. C.Y. Kramer, Biometrics 12, 307 (1956).

    Article  Google Scholar 

  28. Q. Hui, H. Weida, Y. Zhenhua, L. Xiangyang, and G. Haimei, J. Semicond. 31, 036003 (2010).

    Article  Google Scholar 

  29. W.E. Tennant, D. Lee, M. Zandian, E. Piquette, and M. Carmody, J. Electron. Mater. 37, 1406 (2008).

    Article  CAS  Google Scholar 

  30. W.E. Tennant, J. Electron. Mater. 39, 1030 (2010).

    Article  CAS  Google Scholar 

  31. V. Dhar and V. Gopal, Semicond. Sci. Technol. 16, 553 (2001).

    Article  CAS  Google Scholar 

  32. L.O. Bubulac, J.D. Benson, R.N. Jacobs, A.J. Stoltz, M. Jaime-Vasquez, L.A. Almeida, A. Wang, L. Wang, R. Hellmer, T. Golding, J.H. Dinan, M. Carmody, and P.S. Wijewarnasuriya, J. Electron. Mater. 40, 280 (2011).

    Article  CAS  Google Scholar 

  33. A. Weidinger, J.M. Gil, H.V. Alberto, R.C. Vilao, J. Piroto Duarte, N. Ayres de Campos, and S.F.J. Cox, Phys. B 326, 124 (2003).

    Article  CAS  Google Scholar 

  34. G.L. Hansen, J.L. Schmitt, and T.N. Casselman, J. Appl. Phys. 53, 7099 (1982).

    Google Scholar 

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Authors and Affiliations

  1. EPIR Technologies, Inc., 590 Territorial Drive, Unit B, Bolingbrook, IL, 60440, USA

    P. Boieriu, C. Buurma, R. Bommena & C. Blissett

  2. Physics Department, Microphysics Laboratory, University of Illinois at Chicago, 845 W. Taylor St, Chicago, IL, 60606, USA

    C. Buurma, C. Grein & S. Sivananthan

  3. Sivananthan Laboratories, Inc., 590 Territorial Drive, Unit H, Bolingbrook, IL, 60440, USA

    C. Grein

Authors
  1. P. Boieriu
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  2. C. Buurma
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  3. R. Bommena
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  4. C. Blissett
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  5. C. Grein
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  6. S. Sivananthan
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Correspondence to P. Boieriu.

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Boieriu, P., Buurma, C., Bommena, R. et al. Effects of Inductively Coupled Plasma Hydrogen on Long-Wavelength Infrared HgCdTe Photodiodes. J. Electron. Mater. 42, 3379–3384 (2013). https://doi.org/10.1007/s11664-013-2717-6

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  • DOI: https://doi.org/10.1007/s11664-013-2717-6

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