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Indium Gallium Arsenide Quantum Dot Gate Field-Effect Transistor Using II–VI Tunnel Insulators Showing Three-State Behavior

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Abstract

This paper presents an indium gallium arsenide (InGaAs) quantum dot gate field-effect transistor (QDG-FET) that exhibits an intermediate “i” state in addition to the conventional ON and OFF states. The QDG-FET utilized a II–VI gate insulator stack consisting of lattice-matched ZnSe/ZnS/ZnMgS/ZnS/ZnSe for its high-κ and wide-bandgap properties. Germanium oxide (GeO x )-cladded germanium quantum dots were self-assembled over the gate insulator stack, and they allow for the three-state behavior of the device. Electrical characteristics of the fabricated device are also presented.

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering, University of Connecticut, 371 Fairfield Way, U-2157, Storrs, CT, 06269-2157, USA

    P.-Y. Chan, E. Suarez, M. Gogna, B.I. Miller, J.E. Ayers & F.C. Jain

  2. RSoft Design Group, Inc., 400 Executive Boulevard, Suite 100, Ossining, NY, 10562, USA

    E.K. Heller

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  1. P.-Y. Chan
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  2. E. Suarez
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  3. M. Gogna
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  4. B.I. Miller
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  5. E.K. Heller
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  6. J.E. Ayers
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  7. F.C. Jain
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Correspondence to P.-Y. Chan.

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Chan, PY., Suarez, E., Gogna, M. et al. Indium Gallium Arsenide Quantum Dot Gate Field-Effect Transistor Using II–VI Tunnel Insulators Showing Three-State Behavior. J. Electron. Mater. 41, 2810–2815 (2012). https://doi.org/10.1007/s11664-012-2176-5

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  • DOI: https://doi.org/10.1007/s11664-012-2176-5

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