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Group III–V ternary compound semiconductor materials for unipolar conduction in tunnel field-effect transistors

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Abstract

A distinct materials combination is presented for tunnel field-effect transistors (TFETs): gallium arsenide phosphide (GaAsP) as a wider-bandgap material in the drain and channel regions with indium gallium arsenide (InGaAs) as a narrow-bandgap material for the source region. The introduction of this novel materials combination greatly improves the ON-state current, OFF-state current, ambipolar behavior, threshold voltage, and subthreshold slope compared with other group III–V ternary heterojunction TFETs. In GaAsP–InGaAs TFETs, the ambipolar current remains equal to the OFF-state current. This paper explores the potential of the proposed device for ultralow-power high-performance applications.

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Authors and Affiliations

  1. PDPM Indian Institute of Information Technology, Design and Manufacturing, Jabalpur, India

    Bhagwan Ram Raad, Dheeraj Sharma, Kaushal Nigam & Pravin Kondekar

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  1. Bhagwan Ram Raad
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  2. Dheeraj Sharma
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  3. Kaushal Nigam
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  4. Pravin Kondekar
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Correspondence to Bhagwan Ram Raad.

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Raad, B.R., Sharma, D., Nigam, K. et al. Group III–V ternary compound semiconductor materials for unipolar conduction in tunnel field-effect transistors. J Comput Electron 16, 24–29 (2017). https://doi.org/10.1007/s10825-016-0932-0

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  • DOI: https://doi.org/10.1007/s10825-016-0932-0

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