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Effect of Target Density on Microstructural, Electrical, and Optical Properties of Indium Tin Oxide Thin Films

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Abstract

In this paper, indium tin oxide (ITO) targets with different densities were used to deposit ITO thin films. The thin films were deposited from these targets at room temperature and annealed at 750°C. Microstructural, electrical, and optical properties of the as-prepared films were studied. It was found that the target density had no effect on the properties or deposition rate of radiofrequency (RF)-sputtered ITO thin films, different from the findings for direct current (DC)-sputtered films. Therefore, when using RF sputtering, the target does not require a high density and may be reused.

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Authors and Affiliations

  1. School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin, 541004, People’s Republic of China

    Guisheng Zhu, Li Zhi, Huijuan Yang & Huarui Xu

  2. School of Materials Science and Engineering, University of New South Wales, Sydney, NSW, 2052, Australia

    Aibing Yu

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  1. Guisheng Zhu
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  2. Li Zhi
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  3. Huijuan Yang
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  4. Huarui Xu
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  5. Aibing Yu
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Correspondence to Huarui Xu.

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Zhu, G., Zhi, L., Yang, H. et al. Effect of Target Density on Microstructural, Electrical, and Optical Properties of Indium Tin Oxide Thin Films. J. Electron. Mater. 41, 2376–2379 (2012). https://doi.org/10.1007/s11664-012-2155-x

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  • DOI: https://doi.org/10.1007/s11664-012-2155-x

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