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MBE-Grown ZnTe/Si, a Low-Cost Composite Substrate

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Growth of ZnTe on Si using molecular beam epitaxy (MBE) has been pursued as a new approach for a lattice-matched, large-area, low-cost alternate substrate for both II–VI and III–V compound semiconductors with lattice constants very near 6.1 Å, such as HgCdSe and GaSb-based type II strained-layer superlattices. In this paper, we report our findings on the systematic study of MBE growth parameters for both ZnTe(211) on Si(211) and ZnTe(100) on Si(100). Near-optimal growth procedures have been established for producing ZnTe/Si wafers with high crystallinity, low defect and etch pit densities, as well as excellent surface morphology. Using this baseline MBE growth process, we obtained ZnTe(211)/Si wafers with x-ray full-width at half-maximum as low as 70 arcsec.

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Authors and Affiliations

  1. U.S. Army Research Laboratory, 2800 Powder Mill Road, Adelphi, MD, 20783-1197, USA

    Yuanping Chen, Gregory Brill, Priyalal Wijewarnasuriya & Nibir Dhar

  2. George Mason University, 4400 University Drive, Fairfax, VA, 22030, USA

    Sina Simingalam

  3. DARPA, MTO, 3701 N. Fairfax Dr., Arlington, VA, 22203, USA

    Nibir Dhar

  4. School of Engineering for Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA

    Jae Jin Kim

  5. Department of Physics, Arizona State University, Tempe, AZ, 85287, USA

    David J. Smith

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  1. Yuanping Chen
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  2. Sina Simingalam
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  3. Gregory Brill
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Correspondence to Yuanping Chen.

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Chen, Y., Simingalam, S., Brill, G. et al. MBE-Grown ZnTe/Si, a Low-Cost Composite Substrate. J. Electron. Mater. 41, 2917–2924 (2012). https://doi.org/10.1007/s11664-012-2032-7

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  • DOI: https://doi.org/10.1007/s11664-012-2032-7

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