Abstract
The fabrication and characterization of silicon nanowire (NW) array/spin-on glass (SOG) composite films for thermoelectric devices are presented. Interference lithography was used to pattern square lattice photoresist templates over entire 2 cm × 2 cm n-type Si substrates. The photoresist pattern was transferred to a SiO2 hard mask for a single-step deep reactive ion Si etch. The resulting Si NW arrays were 1 μm tall with 15% packing density, and the individual NWs had diameters of 80 nm to 90 nm with vertical sidewalls. The Si NW arrays were embedded in SOG to form a dense and robust composite material for device fabrication and thin-film characterization. The thermal conductivity of the Si NW/SOG composite film was measured to be a constant 1.45 ± 0.2 W/m-K from 300 K to 450 K. An effective medium model was then used to extract a thermal conductivity of 7.5 ± 1.7 W/m-K for the Si nanowires from the measured Si NW/SOG values. The cross-plane Seebeck coefficient of the Si NWs was measured to be −284 ± 26 μV/K, which is comparable to −310 μV/K for bulk Si. Power generation from the combined Si NW/SOG and substrate devices is also presented, and the maximum generated power was found to be 29.3 μW with ΔT of 56 K for a 50 μm × 50 μm device.
Similar content being viewed by others
References
M.E. Brinson and W. Dunstant, J. Phys. C: Solid State Phys. 3, 483 (1970).
L. Weber and E. Gmelin, Appl. Phys. A: Solids Surf. 53, 136 (1991).
A.I. Hochbaum, R. Chen, R.D. Delgado, W. Liang, E.C. Garnett, M. Najarian, A. Majumdar, and P. Yang, Nature 451, 163 (2008).
A.I. Boukai, Y. Bunimovich, J. Tahir-Kheli, J.-K. Yu, W.A. Goddard III, J.R. Heath, and W.A. Goddard, Nature 451, 168 (2008).
J.-K. Yu, S. Mitrovic, D. Tham, J. Varghese, and J.R. Heath, Nat. Nanotechnol. 5, 718 (2010).
P.E. Hopkins, C.M. Reinke, M.F. Su, R.H. Olsson III, E.A. Shaner, Z.C. Leseman, J.R. Serrano, L.M. Phinney, and I. El-Kady, Nano Lett. 11, 107 (2010).
J. Tang, H.-T. Wang, D.H. Lee, M. Fardy, Z. Huo, T.P. Russell, and P. Yang, Nano Lett. 10, 4279 (2010).
R.G. Mathur, R.M. Mehra, and P.C. Mathur, J. Appl. Phys. 83, 5855 (1998).
S.K. Bux, R.G. Blair, P.K. Gogna, H. Lee, G. Chen, M.S. Dresselhaus, R.B. Kaner, and J.-P. Fleurial, Adv. Funct. Mater. 19, 2445 (2009).
A.R. Abramson, W.C. Kim, S.T. Huxtable, H. Yan, Y. Wu, A. Majumdar, C.-L. Tien, and P. Yang, J. Microelectromech. Syst. 13, 505 (2004).
D. Dávila, A. Tarancón, D. Kendig, M. Fernández-Regúlez, N. Sabaté, M. Salleras, C. Calaza, C. Cané, I. Gràcia, E. Figueras, J. Santander, A. San Paulo, A. Shakouri, and L. Fonseca, J. Electron. Mater. 40, 851 (2011).
Y. Li, K. Buddharaju, N. Singh, G. Lo, and S. Lee, IEEE Electron Dev. Lett. 32, 674 (2011).
J. de Boor, N. Geyer, J.V. Wittemann, U. Gösele, and V. Schmidt, Nanotechnology 21, 095302 (2010).
Y.-J. Hung, S.-L. Lee, Y.-T. Pan, B.J. Thibeault, and L.A. Coldren, J. Vac. Sci. Technol. B 28, 1030 (2010).
W.K. Choi, T.H. Liew, M.K. Dawood, H.I. Smith, C.V. Thompson, and M.H. Hong, Nano Lett. 8, 3799 (2008).
D.G. Cahill, Rev. Sci. Instrum. 61, 802 (1990).
D.G. Cahill, M. Katiyar, and J.R. Abelson, Phys. Rev. B 50, 6077 (1994).
T. Tong and A. Majumdar, Rev. Sci. Instrum. 77, 104902 (2006).
A.I. Persson, Y.K. Koh, D.G. Cahill, L. Samuelson, and H. Linke, Nano Lett. 9, 4484–4488 (2009).
R.M. Costescu, A.J. Bullen, G. Matamis, K.E. O’Hara, and D.G. Cahill, Phys. Rev. B 65, 094205 (2002).
S.M. Eichfeld, T.-T. Ho, C.M. Eichfeld, A. Cranmer, S.E. Mohney, T.S. Mayer, and J.M. Redwing, Nanotechnology 18, 315201 (2007).
A. Chaudhry, V. Ramamurthi, E. Fong, and M.S. Islam, Nano Lett. 7, 1536 (2007).
Y.E. Yaish, A. Katsman, G.M. Cohen, and M. Beregovsky, J. Appl. Phys. 109, 094303 (2011).
P.M. Mayer and R.J. Ram, Nanoscale Microscale Thermophys. Eng. 10, 143 (2006).
S.M. Woodruff, N.S. Dellas, B.Z. Liu, S.M. Eichfeld, T.S. Mayer, J.M. Redwing, and S.E. Mohney, J. Vac. Sci. Technol. B 26, 4 (2008).
G. Chen, B. Yang, W.L. Liu, T. Borca-Tasciuc, D. Song, D. Achimov, M.S. Dresselhaus, J.L. Liu, and K. Wang, 20th International Conference on Thermoelectrics Proceedings 30 (2001).
H.H. Solak, J. Phys. D Appl. Phys. 39, R171 (2006).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Curtin, B.M., Fang, E.W. & Bowers, J.E. Highly Ordered Vertical Silicon Nanowire Array Composite Thin Films for Thermoelectric Devices. J. Electron. Mater. 41, 887–894 (2012). https://doi.org/10.1007/s11664-012-1904-1
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11664-012-1904-1