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Study of 4H-SiC JBS Diodes Fabricated with Tungsten Schottky Barrier

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Abstract

Tungsten is a suitable metal contact for high-temperature applications. We fabricated 1.7-kV and 6-kV 4H-SiC junction barrier Schottky (JBS) diodes with a tungsten Schottky contact with different geometries, and their forward characteristics were measured up to 300°C. The 1.7-kV diodes exhibited unipolar conduction up to 6 V at 275°C, whereas 6-kV diodes showed ideal on-resistance, R on. An optimized JBS design permits a higher breakdown voltage to be obtained than for the pure Schottky diode, with a reasonable increase (10%) of the on-resistance. Results demonstrate the feasibility of tungsten JBS diodes for fast-switching, high-voltage, and high-temperature applications.

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Authors and Affiliations

  1. Centro Nacional de Microelectronica, Campus UAB, 08193, Bellaterra, Spain

    M. Berthou, P. Godignon, J. Montserrat & J. Millan

  2. Laboratoire Ampere, 21 Av Capelle Ouest, 69621, Villeurbanne, France

    D. Planson

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  1. M. Berthou
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  2. P. Godignon
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  3. J. Montserrat
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  4. J. Millan
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  5. D. Planson
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Correspondence to M. Berthou.

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Berthou, M., Godignon, P., Montserrat, J. et al. Study of 4H-SiC JBS Diodes Fabricated with Tungsten Schottky Barrier. J. Electron. Mater. 40, 2355–2362 (2011). https://doi.org/10.1007/s11664-011-1774-y

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  • DOI: https://doi.org/10.1007/s11664-011-1774-y

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