Abstract
The ability to pattern HgCdTe surfaces using a wet etching solution is an important challenge for processing of third-generation infrared detectors. The reduction of pixel size, the increase of pixel density, and two-color array technology require perfectly mastered etching to remove very thin layers and to control the state of the surface. To perform this process, a new quantitative chemical approach was developed to carry out very accurate wet etching in aqueous HBr/Br2 solutions. This approach was established to identify the key parameters that govern the etching process and to understand the etching mechanism.
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Causier, A., Gerard, I., Bouttemy, M. et al. Wet Etching of HgCdTe in Aqueous Bromine Solutions: a Quantitative Chemical Approach. J. Electron. Mater. 40, 1823–1829 (2011). https://doi.org/10.1007/s11664-011-1660-7
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DOI: https://doi.org/10.1007/s11664-011-1660-7