Band-to-band Auger recombination mechanisms in HgCdTe are investigated as functions of temperature in the small modulation limit by using realistic electronic structures obtained by empirical pseudopotential calculations and their corresponding wavevector-dependent dielectric functions. The calculated Auger lifetimes are compared with the semiempirical Beattie-Landsberg-Blakemore (BLB) model, which has been extensively employed to reproduce experimental data. The Auger-1 lifetime can be fitted well to the BLB model with a constant overlap integral |F 1 F 2| = 0.16, near the lower limit of the range reported in the literature. The role of the Auger-7 process in p-type HgCdTe is also investigated and the ratio γ between the intrinsic Auger-7 and Auger-1 lifetimes is found to be about 10.
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Bertazzi, F., Goano, M. & Bellotti, E. Calculation of Auger Lifetimes in HgCdTe. J. Electron. Mater. 40, 1663–1667 (2011). https://doi.org/10.1007/s11664-011-1638-5
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DOI: https://doi.org/10.1007/s11664-011-1638-5