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Characterization and Properties of Nickel Aluminide Nanocrystals in an Alumina Layer for Nonvolatile Memory Applications

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Intermetallic nanocrystal memory devices with nickel aluminide nanocrystals in the electron-trapping layer and an alumina layer as the blocking layer were prepared on the surface of oxidized silicon substrates by sputter-coating of Ni and Al2O3 in sequence, followed by an annealing procedure. Several aluminide nanocrystal memory devices are reported. The effect of annealing at 900°C on the memory properties was investigated. Intermetallic nanocrystals were identified by high-resolution transmission electron microscopy and x-ray photoelectron spectroscopy as Ni2Al3 with sizes of 15–20 nm. The results showed that a sixfold increase (0.37 V to 2.34 V) in the memory window could be achieved after annealing for the optimal time of 3 min.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei, 10607, Taiwan

    Dong-Hau Kuo, Yung-Chuan Chen, Jheng-Yu He & Jinn P. Chu

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  1. Dong-Hau Kuo
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  2. Yung-Chuan Chen
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  3. Jheng-Yu He
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Correspondence to Dong-Hau Kuo.

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Kuo, DH., Chen, YC., He, JY. et al. Characterization and Properties of Nickel Aluminide Nanocrystals in an Alumina Layer for Nonvolatile Memory Applications. J. Electron. Mater. 40, 1345–1349 (2011). https://doi.org/10.1007/s11664-011-1576-2

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  • DOI: https://doi.org/10.1007/s11664-011-1576-2

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