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An Investigation of Diffusion Barrier Characteristics of an Electroless Co(W,P) Layer to Lead-Free SnBi Solder

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Abstract

Diffusion barrier characteristics for eutectic SnBi solder/electroless Co(W,P) couples were investigated via liquid-state aging at 250°C and solid-state aging at 120°C. At the couple interface, CoSn3 intermetallic compound (IMC) spallation was observed for the SnBi/amorphous Co(W,P) couple subjected to liquid-state aging. In contrast, no spallation of IMCs was observed for the SnBi/amorphous Co(W,P) couples subjected to solid-state aging. For the SnBi/polycrystalline Co(W,P) couple, a thick IMC layer was observed adjacent to a tungsten-enriched amorphous interfacial layer regardless of aging conditions. IMC formation in all samples indicated that Co(W,P) is essentially a sacrificial barrier to SnBi solder. However, amorphous Co(W,P) might also exhibit stuffed-type barrier behavior due to its relatively high phosphorus (P) content. Analytical results indicated that the P content in Co(W,P) is a crucial factor affecting the structural evolution at the SnBi/electroless Co(W,P) interface.

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References

  1. M.A. Nicolet, Thin Solid Films 52, 415 (1978).

    Article  CAS  Google Scholar 

  2. D.R. Frear, F.M. Hosking, and P.T. Vianco, Proceedings Materials Developments in Microelectronic Packaging Conference (Materials Park, OH: ASM International, 1991), pp. 229–240.

  3. R.H. Uang, K.C. Chen, S.W. Lu, H.T. Hu, and S.H. Huang, Proceedings of 3rd IEEE Electronic Packaging Technology Conference, Singapore, December 5–7, ed. L.T. Beng, C. Lee, and T.K. Chuan (EPTC, 2000), p. 292.

  4. M.W. Liang, T.E. Hsieh, C.C. Chen, and Y.T. Hung, Jpn. J. Appl. Phys. 43, 8258 (2004).

    Article  CAS  Google Scholar 

  5. T. Oppert, E. Zakel, and T. Teutsch, Proceedings of the International Electronics Manufacturing Technology Symposium (IEMT) Symposium, Omiya, Japan, April 15–17, 1998, Proceedings of 2nd IEMT/IMC Symposium (Omiya, 1998), p. 106.

  6. T. Teutsch, T. Oppert, E. Zakel, and E. Klusmann, Electronic Component and Technology Conference (Las Vegas, NV, USA: IEEE, 2000), p. 107.

  7. G.O. Mallory and J.B. Hajdu, Electroless Plating Fundamentals and Applications, Chap. 1–7 (Florida: AESF Orlando, 1990).

    Google Scholar 

  8. M.S. Lee, C. Chen, and C.R. Kao, Chem. Mater. 11, 292 (1999).

    Article  CAS  Google Scholar 

  9. M.S. Lee, C.M. Liu, and C.R. Kao, J. Electron. Mater. 28, 57 (1999).

    Article  CAS  Google Scholar 

  10. W.H. Tao, C. Chen, C.E. Ho, W.T. Chen, and C.R. Kao, Chem. Mater. 13, 1051 (2001).

    Article  CAS  Google Scholar 

  11. B.L. Young and J.G. Duh, J. Electron. Mater. 30, 878 (2001).

    Article  CAS  Google Scholar 

  12. J.J. Guo, A.P. Xian, and J.K. Shang, Surf. Coat. Technol. 202, 268 (2007).

    Article  CAS  Google Scholar 

  13. Y.C. Sohn and J. Yu, J. Mater. Res. 19, 2428 (2004).

    Article  CAS  Google Scholar 

  14. J. Wang, H.S. Liu, L.B. Liu, and Z.P. Jin, J. Electron. Mater. 35, 1842 (2006).

    Article  CAS  Google Scholar 

  15. B.L. Young, J.G. Duh, and G.Y. Jang, J. Electron. Mater. 32, 1463 (2003).

    Article  CAS  Google Scholar 

  16. J.I. Lee, S.W. Chen, H.Y. Chang, and C.M. Chen, J. Electron. Mater. 32, 117 (2003).

    Article  CAS  Google Scholar 

  17. C.Y. Lin, C.C. Jao, C. Lee, and Y.W. Yen, J. Alloys Compd. 440, 333 (2007).

    Article  CAS  Google Scholar 

  18. J.F. Li, S.H. Mannan, M.P. Clode, K. Chen, D.C. Whalley, C. Liu, and D.A. Hutt, Acta Mater. 55, 737 (2007).

    Article  CAS  Google Scholar 

  19. E.J. O’Sullivan, A.G. Schrott, M. Paunovic, C.J. Sambucetti, J.R. Marino, P.J. Bailey, S. Kaja, and K.W. Semkow, IBM J. Res. Dev. 42, 607 (1998).

    Article  Google Scholar 

  20. M.W. Liang, H.T. Yen, and T.E. Hsieh, J. Electron. Mater. 35, 1593 (2006).

    Article  CAS  Google Scholar 

  21. A. Kohn, M. Eizenberg, Y. Shacham-Diamand, and Y. Sverdlov, Mater. Sci. Eng. A302, 18 (2001).

    CAS  Google Scholar 

  22. A. Kohn, M. Eizenberg, Y. Shacham-Diamand, B. Israel, and Y. Sverdlov, Microelectron. Eng. 55, 297 (2001).

    Article  CAS  Google Scholar 

  23. W.C. Wu, T.E. Hsieh, and H.C. Pan, J. Electrochem. Soc. 155, D369 (2008).

    Article  CAS  Google Scholar 

  24. T.B. Massalski, Binary Alloy Phase Diagrams, 2nd ed. (Materials Park, OH: ASM International, 1990).

  25. J.W. Jang, L.N. Ramanathan, J.K. Lin, and D.R. Frear, J. Appl. Phys. 95, 8286 (2004).

    Article  CAS  Google Scholar 

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Authors and Affiliations

  1. Department of Materials Science and Engineering, National Chiao Tung University, 1001 Ta-Hseuh Road, Hsinchu, 30010, Taiwan, ROC

    Hung-Chun Pan & Tsung-Eong Hsieh

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  1. Hung-Chun Pan
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  2. Tsung-Eong Hsieh
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Correspondence to Tsung-Eong Hsieh.

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Pan, HC., Hsieh, TE. An Investigation of Diffusion Barrier Characteristics of an Electroless Co(W,P) Layer to Lead-Free SnBi Solder. J. Electron. Mater. 40, 330–339 (2011). https://doi.org/10.1007/s11664-010-1488-6

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  • DOI: https://doi.org/10.1007/s11664-010-1488-6

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