Abstract
A technique for direct wafer bonding of III–V materials utilizing a dry sulfur passivation method is presented. Large-area bonding occurs for GaAs/GaAs and InP/InP at room temperature. Bulk fracture strength is achieved after annealing GaAs/GaAs at 400°C and InP/InP at 300°C for times less than 12 h without large compressive forces. X-ray photoelectron spectroscopy measurements of the treated, bonded, and subsequently delaminated surfaces of GaAs/GaAs confirm that sulfide is present at the interface and that the oxide components show a reduced concentration when compared with samples treated with only an oxide etch solution.
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References
J.B. Lasky, Appl. Phys. Lett. 48, 78 (1986).
S. Hayashi, M. Goorsky, A. Noori, and D. Bruno, J. Electrochem. Soc. 153, G1011 (2006).
M.B. Joshi, S.L. Hayashi, and M.S. Goorsky, Electrochem. Solid-State Lett. 11, H236 (2008).
W.E. Spicer, I. Lindau, P. Pianetta, P.W. Chye, and C.M. Garner, Thin Solid Films 56, 1 (1979).
F. Shi, K.-L. Chang, J. Epple, C.-F. Xu, K.Y. Chen, and K.C. Hsieh, J. Appl. Phys. 92, 7544 (2002).
C. Lian, H.G. Xing, C.S. Wang, D. Brown, and L. McCarthy, Appl. Phys. Lett. 91, 063502 (2007).
M.L. Huang, Y.C. Chang, C.H. Chang, Y.J. Lee, P. Chang, J. Kwo, T.B. Wu, and M. Hong, Appl. Phys. Lett. 87, 252104 (2005).
M. Zhu, C.-H. Tung, and Y.-C. Yeo, Appl. Phys. Lett. 89, 202903 (2006).
M.S. Carpenter, M.R. Melloch, B. Cowans, Z. Dardas, and W.N. Delgass, J. Vac. Sci. Technol. B 7, 845 (1989).
C.J. Sandroff, R.N. Nottenburg, J.C. Bischoff, and R. Bhat, Appl. Phys. Lett. 51, 33 (1987).
H. Huang, X. Ren, X. Wang, Q. Wang, and Y. Huang, Appl. Phys. Lett. 88, 061104 (2006).
K.D. Choquette, K.M. Geib, H.Q. Hou, A.A. Allerman, S. Kravitz, D.M. Follstaedt, and J.J. Hindi, Wafer Fusion for Integration of Semiconductor Materials and Devices, Report No. SAND99-0923 (1999).
K. Nakayama, K. Tanabe, and H.A. Atwater, J. Appl. Phys. 103, 094503 (2008).
C.I.H. Ashby, K. Zavadil, A. Howard, and B.E. Hammons, Appl. Phys. Lett. 64, 23882390 (1994).
R.S. Bradley, Proc. R. Soc. Lond. A Math. Phys. Sci. 205, 553 (1951).
K.R. Zavadil, C.I.H. Ashby, A.J. Howard, and B.E. Hammons, Ultraviolet Photosulfidation of III–V Compound Semiconductors for Electronic Passivation (Orlando, FL, USA: AVS, 1994), p. 1045.
A. Plossl and G. Krauter, Mater. Sci. Eng. R Rep. 25, 1 (1999).
S. Arabasz, E. Bergignat, G. Hollinger, and J. Szuber, Appl. Surf. Sci. 252, 7659 (2006).
S. Adachi, J. Appl. Phys. 58, R1 (1985).
N. Liu and T. Kuech, J. Electron. Mater. 34, 1010 (2005).
T. Akatsu, A. Plossl, R. Scholz, H. Stenzel, and U. Gosele, J. Appl. Phys. 90, 3856 (2001).
F. Shi, S. MacLaren, C. Xu, K.Y. Cheng, and K.C. Hsieh, J. Appl. Phys. 93, 5750 (2003).
J.F. Moulder, W.F. Stickle, P.E. Sobol, and K. Bomben, Handbook of X-Ray Photoelectron Spectroscopy, 2nd ed. (Perkin-Elmer Corporation (Physical Electronics), 1992).
H. Ouyang, H.-H. Chiou, Y.S. Wu, J. Cheng, and W. Ouyang, J. Appl. Phys. 102, 013710 (2007).
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Open Access This is an open access article distributed under the terms of the Creative Commons Attribution Noncommercial License (https://creativecommons.org/licenses/by-nc/2.0), which permits any noncommercial use, distribution, and reproduction in any medium, provided the original author(s) and source are credited.
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Jackson, M.J., Chen, LM., Kumar, A. et al. Low-Temperature III–V Direct Wafer Bonding Surface Preparation Using a UV-Sulfur Process. J. Electron. Mater. 40, 1–5 (2011). https://doi.org/10.1007/s11664-010-1397-8
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DOI: https://doi.org/10.1007/s11664-010-1397-8