The thermal management of high-power GaN-based light-emitting diodes (LEDs) soldered with Sn-3 wt.%Ag-0.5 wt.%Cu (SAC305) solder and diamond-added SAC305 solder was evaluated. Diamond addition was found to significantly reduce the surface temperature and total thermal resistance of the LEDs, revealing that diamond-added SAC305 solder is a promising die-attach material for high-power LED packaging. Interfacial reactions in the LED solder joints were also investigated. The thin Au wetting layer in the chip’s backside metallization was rapidly consumed in the initial stage of reflow, forming an AuSn4 phase at the interface. Subsequently, the AuSn4 phase detached from the interface, leading to dewetting of the SAC305 solder from the LED chip. To avoid dewetting, a new backside metallization of LED chips should be developed for SAC305 solder.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
M. Arik, J. Petroski, and S. Weaver, Inter Soc. Conf. on Thermal Phenomena (2004), p. 64.
H.H. Kim, S.H. Choi, S.H. Shin, Y.K. Lee, S.M. Choi, and S. Yi, Microelectron. Reliab. 48, 445 (2008).
F.P. McCluskey, M. Dash, Z. Wang, and D. Huff, Microelectron. Reliab. 46, 1910 (2006).
J.W. Park, Y.B. Yoon, S.H. Shin, and S.H. Choi, Mater. Sci. Eng. A 441, 357 (2006).
S.L. Shinde and J.S. Goela, High Thermal Conductivity Materials (New York: Springer, 2006).
P.H. Chen, C.L. Lin, Y.K. Liu, T.Y. Chung, and C.Y. Liu, IEEE Photonics Technol. Lett. 20, 10 (2008).
P. Hui and H.S. Tan, J. Appl. Phys. 75, 748 (1994).
N. Narendran and Y. Gu, IEEE OSA J. Disp. Technol. 1, 1 (2005).
S.Y. Jang, J. Wolf, O. Ehrmann, H. Gloor, H. Reichl, and K.W. Paik, IEEE Trans. Electron. Packag. Manuf. 25, 193 (2002).
H.K. Kim and K.N. Tu, Appl. Phys. Lett. 68, 16 (1996).
D.W. Zheng, Z.Y. Jia, C.Y. Liu, W. Wen, and K.N. Tu, J. Mater. Res. 13, 5 (1998).
K.N. Tu and K. Zeng, Mater. Sci. Eng. 34, 58 (2001).
M.S. Shin and Y.H. Kim, J. Electron. Mater. 32, 1448 (2003).
Y.W. Yen, H.W. Tseng, K. Zeng, S.J. Wang, and C.Y. Liu, J. Electron. Mater. 38, 2257 (2009).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
Open Access This is an open access article distributed under the terms of the Creative Commons Attribution Noncommercial License ( https://creativecommons.org/licenses/by-nc/2.0 ), which permits any noncommercial use, distribution, and reproduction in any medium, provided the original author(s) and source are credited.
About this article
Cite this article
Chen, CJ., Chen, CM., Horng, RH. et al. Thermal Management and Interfacial Properties in High-Power GaN-Based Light-Emitting Diodes Employing Diamond-Added Sn-3 wt.%Ag-0.5 wt.%Cu Solder as a Die-Attach Material. J. Electron. Mater. 39, 2618–2626 (2010). https://doi.org/10.1007/s11664-010-1354-6
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11664-010-1354-6