Abstract
A thin-film joining method utilizing evaporated films as the joining material was newly developed for power semiconductor die attachment. When the evaporated films are completely transformed into intermetallic compounds (IMCs) with high melting points, the joint can exhibit the required high-temperature strength. In this study, a joint consisting of Cu6Sn5, (Ag,Cu)3Sn, and Cu3Sn IMCs was achieved at 573 K after 30 s. Results of nanoindentation tests revealed the hardness and elastic moduli of each IMC. In accelerated tests, a high-temperature strength of at least 15 MPa was shown for 3.6 Ms at 423 K or 500 cycles between 223 K and 403 K. These results suggest that the IMC joint has great potential as a die-attach material.
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References
L.N. Ramanathan, J.W. Jang, J.K. Lin, and D.R. Frear, J. Electron. Mater. 34, 1357 (2005).
D. Pan, I. Dutta, S.G. Jadhav, G.F. Raiser, and S. Ma, J. Electron. Mater. 34, 1040 (2005).
A. Scandurra, A. Porto, and O. Puglisi, Appl. Surf. Sci. 89, 1 (1995).
Welding Handbook Committee, Welding Handbook, 3rd ed. (New York: American Welding Society, 1950), p. 45.
D. Olsen, T. Siewart, S. Liu, and G. Edwards, Welding, Brazing, and Soldering (Materials Park, OH: ASM International, 1993), p. 457.
Directive 2002/95/EC of the European Parliament and of the Council on the Restriction of the Use of Certain Hazardous Substances in Electrical and Electronic Equipment.
J.N. Lalena, N.F. Dean, and M.W. Weiser, J. Electron. Mater. 31, 1244 (2002).
S. Terashima, T. Uno, E. Hashimoto, and K. Tatsumi, Mater. Trans. 42, 803 (2001).
Y. Yamada, Y. Takaku, Y. Yagi, Y. Nishibe, I. Ohnuma, Y. Sutou, R. Kainuma, and K. Ishida, Microelectron. Reliab. 46, 1932 (2006).
T. Shimizu, H. Ishikawa, I. Ohnuma, and K. Ishida, J. Electron. Mater. 28, 1172 (1999).
T. Takahashi, T. Kono, and S. Komatsu, Proceedings of the International Conference on Electronics Packaging (2008), p. 199.
T. Takahashi, S. Komatsu, and T. Kono, MRS Proc. 1129, 335 (2008).
H.-J. Albrecht, T. Hannach, A. Juritza, W.H. Muller, and J. Sterthaus, Proceedings of the 6th Electronics Materials and Packaging Conference (2004), p. 288.
H.-J. Albrecht, A. Juritza, K. Muller, W.H. Muller, J. Sterthaus, J. Villain, and A. Vogliano, Proceedings of the 5th Electronics Packaging Technology Conference (2003), p. 726.
X. Deng, M. Koopman, N. Chawla, and K.K. Chawla, Mater. Sci. Eng. A364, 240 (2004).
X. Deng, N. Chawla, K.K. Chawla, and M. Koopman, Acta Mater. 52, 4291 (2004).
R.J. Fields, S.R. Low, and G.K. Lucey Jr., The Metal Science of Joining (Warrendale, PA: The Minerals, Metals & Materials Society, 1992), p. 165.
S. Dunford, S. Canumalla, and P. Viswanadham, Proceedings of the 54th Electronic Components and Technology Conference (2004), p. 726.
T.B. Massalski, J.L. Murray, L.H. Bennett, and H. Baker, Binary Alloy Phase Diagrams (Materials Park, OH: American Society for Metals, 1986).
J. Hey, Mechanical Testing by Indentation, Course Notes (Oak Ridge, TN: Nano Instruments Inc., 1997).
W.C. Oliver and G.M. Pharr, J. Mater. Res. 7, 1564 (1992).
N. Jiang, J.A. Clum, R.R. Chromik, and E.J. Cotts, Scr. Mater. 37, 1851 (1997).
American Institute of Physics, American Institute of Physics Handbook, 2nd ed. (New York: McGraw-Hill, 1957), p. 4.
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Takahashi, T., Komatsu, S., Nishikawa, H. et al. High-Temperature Resistant Intermetallic Compound Joints for Si Chips and Cu Substrates. J. Electron. Mater. 39, 2274–2280 (2010). https://doi.org/10.1007/s11664-010-1326-x
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DOI: https://doi.org/10.1007/s11664-010-1326-x