Abstract
Low-temperature growth of undoped ZnO films with high transparency and low electrical resistance was performed by ion beam sputtering. After systematic testing, resistivity as low as 2.95 × 10−3 Ω cm was obtained at a substrate temperature of 150°C, ion source voltage of 850 V, and ion beam current of 30 mA. The transmittance of the ZnO films was in the range of 85% to 90%. Hall measurements showed that a high mobility of 21.41 cm2/Vs was obtained for films less than 200 nm thick. The related microstructures and physical properties were measured and are discussed.
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Acknowledgements
This works was financially supported by the National Science Council under Contract Number NSC 97-2221-E-145-001 and by the Center for Nanoscience and Nanotechnology, National Sun Yet-sen University.
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Shen, JH., Yeh, SW., Huang, HL. et al. Low-Temperature Preparation of Undoped ZnO Films with High Transparency and Conductivity by Ion Beam Deposition. J. Electron. Mater. 39, 612–618 (2010). https://doi.org/10.1007/s11664-010-1130-7
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DOI: https://doi.org/10.1007/s11664-010-1130-7