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Compositional and Strain Characterization of Ion-Beam-Synthesized Ge x Si1−x Thin Films

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A thin film of Ge-rich Ge x Si1−x on a (100) Si substrate was synthesized by ion implantation followed by thermal oxidation. Proper oxidation conditions were maintained to produce a film with Ge atomic content of more than 95%, confirmed by both high-resolution Rutherford backscattering spectrometry (RBS) and Raman spectroscopy. The strain state of the Ge-rich thin film is a function of its thickness, as determined by the implantation fluence. The use of Raman spectroscopy to monitor the composition and strain state of the Ge thin film formed is discussed.

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Acknowledgement

Authors greatly appreciate the TEM analysis performed by M. F. Chisholm at Oak Ridge National Laboratory. Work done at UNT is supported by the Robert A. Welch Foundation and the National Science Foundation.

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Authors and Affiliations

  1. Ion Beam Modification and Analysis Laboratory, Department of Physics, University of North Texas, 1155 Union Circle #311427, Denton, TX, 76203, USA

    K. Hossain, V. C. Kummari, B. Rout, J. L. Duggan & F. D. McDaniel

  2. Amethyst Research Incorporated, 2610 Sam Noble Parkway, Ardmore, OK, 73401, USA

    K. Hossain & O. W. Holland

Authors
  1. K. Hossain
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  2. V. C. Kummari
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  3. O. W. Holland
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  4. B. Rout
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  5. J. L. Duggan
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  6. F. D. McDaniel
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Correspondence to K. Hossain.

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Hossain, K., Kummari, V.C., Holland, O.W. et al. Compositional and Strain Characterization of Ion-Beam-Synthesized Ge x Si1−x Thin Films. J. Electron. Mater. 39, 174–177 (2010). https://doi.org/10.1007/s11664-009-1042-6

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  • DOI: https://doi.org/10.1007/s11664-009-1042-6

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