Abstract
Single-phase β-Zn4Sb3 materials were prepared by mechanical grinding (MG). Source materials for the Zn4Sb3 ingots were prepared using three different processes after the direct melting of constituent elements. In process 1, the ingot was obtained by quenching the melt in water within an evacuated quartz ampoule. In process 2, the ingot was heat-treated for 100 h at 723 K after process 1. In process 3, the ingot was heat-treated for a total of 200 h in two stages at 723 K and 673 K after process 1. The resultant ingots were mechanically ground and sintered at 623 K by hot pressing. The sintered materials were characterized by x-ray diffraction, differential thermal analysis (DTA), and thermoelectric property measurements. The thermal conductivity of the sintered materials was 0.88 W m−1 K−1 at room temperature, being slightly lower than that reported for the materials prepared by a conventional method. Results indicate that the dimensionless figure of merit of the single-phase β-Zn4Sb3 ranged from 1.06 to 1.31 at 573 K.
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A retraction note to this article is available at http://dx.doi.org/10.1007/s11664-012-2186-3.
This article from the 2009 International Conference on Thermoelectrics has been retracted by the Journal of Electronic Materials due to significant duplication of content with a paper previously published as "Thermoelectric Properties and Scattering Factors of Finely Grained Bi2Te3-Related Materials Prepared by Mechanical Alloying" by Kazuhiro Hasezaki, Maki Ashida, Takashi Ueda, and Y. Noda, Materials Transactions 51, 863 (2010). DOI:10.2320/matertrans.MH200901
An erratum to this article is available at http://dx.doi.org/10.1007/s11664-012-2186-3.
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Okamura, C., Ueda, T. & Hasezaki, K. RETRACTED ARTICLE: Single-Phase β-Zn4Sb3 Prepared by a Mechanical Grinding Method. J. Electron. Mater. 39, 2172–2175 (2010). https://doi.org/10.1007/s11664-009-0979-9
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DOI: https://doi.org/10.1007/s11664-009-0979-9