Skip to main content
SpringerLink
Log in

Abnormal Failure Behavior of Sn-3.5Ag Solder Bumps Under Excessive Electric Current Stressing Conditions

  • Published:
Journal of Electronic Materials Aims and scope Submit manuscript

Abnormal failure behavior of flip chip Sn-3.5Ag solder bumps with a Cu underbump metallurgy under excessive electric current stressing conditions is investigated with regard to electromigration lifetime characteristics and damage evolution morphologies. Abnormal behavior such as abrupt changes in the slope of the resistance versus stressing time curve correlate well with the changes in mean time to failure and the standard deviation with respect to␣the resistance increase ratio, which seems to be strongly related to highly␣accelerated electromigration test conditions of 120°C to 160°C and 3 × 104 A/cm2 to 4.6 × 104 A/cm2. This is closely related to changes in the damage evolution mechanism with time, even though the activation energy for electrical failure is primarily controlled by Cu diffusion through Cu-Sn intermetallic compound layers.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. J.R. Lloyd, J. Phys. D: Appl.Phys. 32, 109 (1999)

    Article  ADS  MathSciNet  Google Scholar 

  2. Y.B. Park, D.W. Lee, and W.G. Lee, J. Electron. Mater. 30, 1569 (2001)

    Article  ADS  CAS  Google Scholar 

  3. I.S. Jeon and Y.B. Park, Microelectron. Reliab. 44, 917 (2004)

    Article  CAS  Google Scholar 

  4. C.Y. Liu, J.T. Chen, Y.C. Chuang, Lin. Ke, and S.J. Wang, Appl. Phys. Lett. 90, 112114 (2007)

    Article  ADS  Google Scholar 

  5. Y.C. Chuang, and C.Y. Liu, Appl. Phys. Lett. 88, 174105 (2006)

    Article  ADS  Google Scholar 

  6. A.T. Huang, K.N. Tu, and Y.S. Lai, J. Appl. Phys. 100, 033512 (2006)

    Article  ADS  Google Scholar 

  7. J.W. Jang, L.N. Ramanathan, J. Tang, and D.R. Frear, J.␣Electron. Mater. 37, 185 (2008)

    Article  ADS  CAS  Google Scholar 

  8. B. Chao, S.H. Chae, X. Zhang, K.-H. Lu, M. Ding, J. Im, and P.S. Ho, J. Appl. Phys. 100, 084909 (2006)

    Article  ADS  Google Scholar 

  9. J.W. Nah, F. Ren, S. Venk, G. Camara, and K.N. Tu, J. Appl. Phys. 99, 023520 (2006)

    Article  ADS  Google Scholar 

  10. S.H. Chiu, T.L. Shao, C. Chen, D.J. Yao, and C.Y. Hsu, Appl. Phys. Lett. 88, 022110 (2006)

    Article  ADS  Google Scholar 

  11. J.H. Lee, Y.D. Lee, and Y.B. Park, Proceedings of the 57th Electronic Components and Technology Conference (IEEE, Piscataway, NJ, 2007), pp. 1436–1441.

  12. S.-H. Chae, X. Zhang, H.-L. Chao, K.-H. Lu, and P.S. Ho, Proceedings of the 56th Electronic Components and Technology Conference (IEEE, Piscataway, NJ, 2006), pp. 650–656.

  13. M. Ding, G. Wang, B. Chao, P.S. Ho, P. Su, and T. Uehling, J. Appl. Phys. 99, 094906 (2006)

    Article  ADS  Google Scholar 

  14. J.W. Nah, J.O. Suh, and K.N. Tu, J. Appl. Phys. 98, 013715 (2005)

    Article  ADS  Google Scholar 

  15. T.L. Shao, Y.H. Chen, S.H. Chiu and C. Chen, J. Appl. Phys. 96, 4518 (2004)

    Article  ADS  CAS  Google Scholar 

  16. Y.H. Lin, Y.C. Hu, C.M. Tsai, C.R. Kao, and K.N. Tu, Acta Mater. 53, 2029 (2005)

    CAS  Google Scholar 

  17. D.W. Lee, B.Z. Lee, J.Y. Jeong, H. Park, K.C. Shim, J.S. Kim, Y.B. Park, S.W. Woo, and J.G. Lee, Jpn. J. Appl. Phys. 41, 557 (2002)

    Article  ADS  CAS  Google Scholar 

  18. J.R. Black, IEEE Trans. Electron Dev. ED-164, 338 (1969)

    Article  Google Scholar 

  19. W.J. Choi, E.C.C. Yeh, and K.N. Tu, J. Appl. Phys. 94, 5665 (2003)

    Article  ADS  CAS  Google Scholar 

  20. M.S. Yoon, S.B. Lee, O.H. Kim, Y.B. Park, and Y.C. Joo, J.␣Appl. Phys. 100, 033715 (2006)

    Article  ADS  Google Scholar 

  21. C.Y. Liu, Lin Ke, Y.C. Chuang, and S.J. Wang, J. Appl. Phys. 100, 083702 (2006)

    Article  ADS  Google Scholar 

  22. S. Choi, T.R. Bieler, J.P. Lucas, and K.N. Subramanian, J.␣Electron. Mater. 28, 1208 (1999)

    ADS  Google Scholar 

  23. C.-M. Chuang and K.-L. Lin, J. Electron. Mater. 32, 1426 (2003)

    Article  ADS  CAS  Google Scholar 

  24. S.-W. Chen, C.-M. Chen, and W.-C. Liu, J. Electron. Mater. 27, 1193 (1998)

    Article  ADS  CAS  Google Scholar 

Download references

Acknowledgements

This work was supported by Hynix Semiconductor Inc., and partially by a joint research project of The Korea Research Council for Industrial Science and Technology of the Korea Ministry of Knowledge Economy. The authors would like to thank S.T. Yang, M.S. Suh, Q.H. Chung, and K.Y. Byun for valuable discussions and sample preparations.

Author information

Authors and Affiliations

  1. Hynix Semiconductor Inc., Icheon, Korea

    Jang-Hee Lee

  2. School of Materials Science and Engineering, Andong National University, Andong, 760-749, Korea

    Young-Bae Park

Authors
  1. Jang-Hee Lee
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Young-Bae Park
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Young-Bae Park.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Lee, JH., Park, YB. Abnormal Failure Behavior of Sn-3.5Ag Solder Bumps Under Excessive Electric Current Stressing Conditions. J. Electron. Mater. 38, 2194–2200 (2009). https://doi.org/10.1007/s11664-009-0855-7

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s11664-009-0855-7

Keywords

Search

Navigation