Abstract
In this communication we report the first results of electro-optical characterization of planar heterostructure HgCdTe avalanche photodiodes (APDs), which enables the operation of APDs at high gain, at low bias, and with low dark current and/or at high operating temperature (HOT). The APD is based on a heterostructure in which the photons are detected in a wide-band-gap layer, and the photoelectrons are amplified in a vertical junction in a confined narrow-gap layer. The dark diffusion current and thermal background sensitivity of the device are limited by using a thin narrow-band-gap amplification layer. In addition, the defect-limited dark current is also expected to be reduced due to the reduced volume of the narrow-band-gap depletion layer. The electro-optical performance was characterized at T = 80 K and T = 200 K for two devices with a nominal thickness of the amplification layer of w = 100 nm and 500 nm, realized in x Cd = 0.3 Hg-vacancy-doped layers grown by molecular-beam epitaxy (MBE). The measurements show an average gain of 〈M〈 = 10 at a reverse bias of 5 V, which is slightly reduced compared with a conventional APD with x Cd = 0.3. The thermal diffusion current measured at low reverse bias, V b = 0.1 V, and at T = 200 K is about 0.1 mA/cm2 to 0.3 mA/cm2, which is a factor of 50 lower than standard x Cd = 0.3 n-on-p APDs. The quantum efficiency due to absorption in the gain layer is high (QEpeak > 30%), although no antireflecting coating was used, indicating that the device can also be used for high-operating-temperature thermal detection.
Similar content being viewed by others
References
J.D. Beck, C.-F. Wan, M.A. Kinch, J.E. Robinson, Proc. SPIE, 4454, 188 (2001). doi:10.1117/12.448174.
M.A. Kinch, J.D. Beck, C.-F. Wan, F. Ma, J. Campbell, J. Electron. Mater., 33, 630 (2004). doi:10.1007/s11664-004-0058-1.
J.D. Beck, C.-F. Wan, M.A. Kinch, J.E. Robinson, P. Mitra, R. Scrithfield, F. Ma, J. Campbell, J. Electron. Mater., 35,1166 (2006). doi:10.1007/s11664-006-0237-3.
J.D. Beck, C.-F. Wan, M.A. Kinch, J.E. Robinson, P. Mitra, R. Scritchfield, F. Ma, and J. Campbell, J. Electron. Mater. 38 (2009), to be published.
M. Vaidyanathan, A. Joshi, Song Xue, B. Hanyaloglu, M. Thomas, M. Zandian, D. Edwall, G. Williams, J. Blackwell, W. Tennant, and G. Hughes, 2004 IEEE Aerospace Conference Proc. (2004), p. 1776.
I. Baker, S. Duncan and J. Copley, Proc. SPIE, 5406, 113 (2004).
I. Baker, P. Thorne, J. Henderson, J. Copley, D. Humphreys, and A. Millar, Proc. SPIE, 6206, 620608-1 (2006). doi:10.1117/12.673577.
R. S. Hall, N.T. Gordon, J. Giess, J.E. Hails, A. Graham, D.C. Herbert, D.J. Hall, P. Southern, J.W. Cairns, D.J. Lees, and T. Ashley, Proc. SPIE, 5783, 412 (2005). doi:10.1117/12.603386.
G. Perrais, J. Rothman, G. Destefanis, J. Baylet, P. Castelein, J.-P. Chamonal et P. Tribolet, Proc. SPIE, 6935, 69350H (2006).
M. B. Reine, J. W. Marciniec, K. K. Wong, T. Parodos, J. D. Mullarkey, P. A. Lamarre, S. P. Tobin and K. A. Gustavsen, Proc. SPIE 6294, 629401 (2006). doi:10.1117/12.674137.
M. B. Reine, J. W. Marciniec, K. K. Wong, T. Parodos, J. D. Mullarkey, P. A. Lamarre, S. P. Tobin and K. A. Gustavsen, J. Electron. Mater., 36, 1059 (2007). doi:10.1007/s11664-007-0172-y.
J. Rothman G. Perrais, P. Ballet, L. Mollard, S. Gout, and J.-P. Chamonal., J. Electron. Mater. 37, 1303 (2008). doi:10.1007/s11664-008-0449-9.
J. Rothman, G. Perrais, E. de Borniol, P. Castelein, N. Baier, F. Guellec, M. Tchagaspanian, P. Ballet, L. Mollard, S. Gout, A. Perez, M. Fournier, J.-P. Chamonal, P. Tribolet and G. Destefanis, Proc. SPIE 6940, 69402 N (2008). doi:10.1117/12.780447.
J. Asbrock, S. Bailey, D Baley, J. Boisvert, G. Chapman,G. Crawforda, T. De Lyon, B. Drafahl, J. Edwards, E. Herrin, C. Hoyt, M. Jack, R. Kvaasa, K. Liu, W. McKeag, R. Rajavel, V. Randall, S. Rengarajanc and J.Rikerd., Proc. SPIE, 6940, 69402O (2008). doi:10.1117/12.783940.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Rothman, J., Baier, N., Ballet, P. et al. High-Operating-Temperature HgCdTe Avalanche Photodiodes. J. Electron. Mater. 38, 1707–1716 (2009). https://doi.org/10.1007/s11664-009-0823-2
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11664-009-0823-2