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Flexibility of p–n Junction Formation from SWIR to LWIR Using MBE-Grown Hg(1–x)Cd x Te on Si Substrates

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In this paper, we show the versatility of using molecular-beam epitaxy (MBE) for the growth of the mercury cadmium telluride (HgCdTe) system. Abrupt composition profiles, changes in doping levels or switching doping types are easily performed. It is shown that high-quality material is achieved with Hg(1–x)Cd x Te grown by MBE from a cadmium mole fraction of x = 0.15 to x = 0.72. Doping elements incorporation as low as 1015 cm−3 for both n-type and p-type material as well as high incorporation levels >1018 cm−3 for both carrier types were achieved. X-ray curves, secondary-ion mass spectrometry (SIMS) data, Hall data, the influence of doping incorporation with cadmium content and growth rate, etch pit density (EPD), composition uniformity determined from Fourier-transform infrared (FTIR) transmission spectro- scopy, and surface defect maps from low to high x values are presented to illustrate the versatility and quality of HgCdTe material grown by MBE. All data presented in this work are from layers grown on silicon (112) substrate.

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Authors and Affiliations

  1. Raytheon Vision System (RVS), 75 Coromar Drive, Goleta, CA, 93117, USA

    M.F. Vilela, S.F. Harris, R.E. Kvaas, A.A. Buell, M.D. Newton, K.R. Olsson, D.D. Lofgreen & S.M. Johnson

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  1. M.F. Vilela
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  2. S.F. Harris
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  3. R.E. Kvaas
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  4. A.A. Buell
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  8. S.M. Johnson
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Vilela, M., Harris, S., Kvaas, R. et al. Flexibility of p–n Junction Formation from SWIR to LWIR Using MBE-Grown Hg(1–x)Cd x Te on Si Substrates. J. Electron. Mater. 38, 1755–1763 (2009). https://doi.org/10.1007/s11664-009-0793-4

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