Abstract
Scanning electron microscopy (SEM), atomic force microscopy (AFM), and x-ray diffraction (XRD) measurements all indicate an approximate factor of ten increase in the Everson etch pit density (EPD) over standard Nomarski microscopy Everson EPD determination. A new (112)B CdTe/Si EPD etch has also been demonstrated which reduces the surface roughness of the etched epilayer and makes etch pit density determination less problematic.
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Benson, J.D., Smith, P.J., Jacobs, R.N. et al. Topography and Dislocations in (112)B HgCdTe/CdTe/Si. J. Electron. Mater. 38, 1771–1775 (2009). https://doi.org/10.1007/s11664-009-0758-7
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DOI: https://doi.org/10.1007/s11664-009-0758-7