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Reflectivity and Abnormal Absorption at ITO/Al Interface

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The electrical and optical thermal stability of indium tin oxide (ITO)/Al bilayers are investigated in this study. The electrical resistivity of ITO and ITO/Al multilayers, both about 1 × 10−3 Ω cm after annealing at 300°C for 1 min, are measured by the four-probe measurement method. In addition to the electrical measurements, we also observe the rapid initial diffusion of Al atoms into the ITO thin films. When the diffusing elemental Al atoms occupy interstitial sites they tend to form defects, causing a serious decrease in the reflectance of the a-ITO/Al bilayer in the wavelength region from 400 nm to 600 nm.

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Acknowledgement

The authors would like to thank the Taiwan NSC (National Science Council) and NCUOSC (National Central University Optical Science Center) for their support of this research.

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Authors and Affiliations

  1. Department of Chemical Engineering and Materials Engineering, National Central University, Jhongli, 32001, Taiwan, ROC

    Y.H. Lin & C.Y. Liu

  2. Institute of Materials Science and Engineering, National Central University, Jhongli, 32001, Taiwan, ROC

    C.Y. Liu

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  1. Y.H. Lin
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  2. C.Y. Liu
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Correspondence to Y.H. Lin.

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Lin, Y., Liu, C. Reflectivity and Abnormal Absorption at ITO/Al Interface. J. Electron. Mater. 38, 108–112 (2009). https://doi.org/10.1007/s11664-008-0578-1

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  • DOI: https://doi.org/10.1007/s11664-008-0578-1

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