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Electromigration Behavior in Sn-37Pb and Sn-3.0Ag-0.5Cu Flip-Chip Solder Joints under High Current Density

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Abstract

The electromigration of conventional Sn-37Pb and Pb-free Sn-3.0Ag-0.5Cu (in wt.%) solder bumps was investigated with a high current density of 2.5 × 104 A/cm2 at 423 K using flip-chip specimens comprised of an upper Si chip and a lower bismaleimide triazine (BT) substrate. Electromigration failure of the Sn-37Pb and Sn-3.0Ag-0.5Cu solder bumps occurred with complete consumption of electroless Ni immersion Au (ENIG) underbump metallization (UBM) and void formation at the cathode side of the solder bump. Finite element analysis and computational simulations indicated high current crowding of electrons in the patterned Cu on the Si chip side, whereas the solder bumps and Cu line of the BT substrate had a relatively low density of flowing electrons. These findings were confirmed by the experimental results. The electromigration reliability of the Sn-3.0Ag-0.5Cu solder joint was superior to that of Sn-37Pb.

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Acknowledgement

This work was supported by the Component Material Technology Development Program of the Ministry of Commerce, Industry, and Energy (MOCIE).

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Authors and Affiliations

  1. School of Advanced Materials Science and Engineering, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon, 440-746, Korea

    Sang-Su Ha, Jong-Woong Kim, Jeong-Won Yoon, Sang-Ok Ha & Seung-Boo Jung

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  1. Sang-Su Ha
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  2. Jong-Woong Kim
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  3. Jeong-Won Yoon
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Correspondence to Seung-Boo Jung.

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Ha, SS., Kim, JW., Yoon, JW. et al. Electromigration Behavior in Sn-37Pb and Sn-3.0Ag-0.5Cu Flip-Chip Solder Joints under High Current Density. J. Electron. Mater. 38, 70–77 (2009). https://doi.org/10.1007/s11664-008-0574-5

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  • DOI: https://doi.org/10.1007/s11664-008-0574-5

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