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A Study on the Thermal Reliability of Cu/SnAg Double-Bump Flip-Chip Assemblies on Organic Substrates

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The Cu/SnAg double-bump structure is a promising candidate for fine-pitch flip-chip applications. In this study, the interfacial reactions of Cu (60 μm)/SnAg (20 μm) double-bump flip chip assemblies with a 100 μm pitch were investigated. Two types of thermal treatments, multiple reflows and thermal aging, were performed to evaluate the thermal reliability of Cu/SnAg flip-chip assemblies on organic printed circuit boards (PCBs). After these thermal treatments, the resulting intermetallic compounds (IMCs) were identified with scanning electron microscopy (SEM), and the contact resistance was measured using a daisy-chain and a four-point Kelvin structure. Several types of intermetallic compounds form at the Cu column/SnAg solder interface and the SnAg solder/Ni pad interface. In the case of flip-chip samples reflowed at 250°C and 280°C, Cu6Sn5 and (Cu, Ni)6Sn5 IMCs were found at the Cu/SnAg and SnAg/Ni interfaces, respectively. In addition, an abnormal Ag3Sn phase was detected inside the SnAg solder. However, no changes were found in the electrical contact resistance in spite of severe IMC formation in the SnAg solder after five reflows. In thermally aged flip-chip samples, Cu6Sn5 and Cu3Sn IMCs were found at the Cu/SnAg interface, and (Cu, Ni)6Sn5 IMCs were found at the SnAg/Ni interface. However, Ag3Sn IMCs were not observed, even for longer aging times and higher temperatures. The growth of Cu3Sn IMCs at the Cu/SnAg interface was found to lead to the formation of Kirkendall voids inside the Cu3Sn IMCs and linked voids within the Cu3Sn/Cu column interfaces. These voids became more evident when the aging time and temperature increased. The contact resistance was found to be nearly unchanged after 2000 h at 125°C, but increases slightly at 150°C, and a number of Cu/SnAg joints failed after 2000 h. This failure was caused by a reduction in the contact area due to the formation of Kirkendall and linked voids at the Cu column/Cu3Sn IMC interface.

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Acknowledgement

This work was supported by the Center for Electronic Packaging Materials (ERC) of MOST/KOSEF (Grant# R11-2000-085-08005-0). The authors would like to thank the KBSI (Korea Basic Science Institute) for the SEM and EPMA analyses.

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Correspondence to Ho-Young Son.

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Son, HY., Jung, GJ., Park, BJ. et al. A Study on the Thermal Reliability of Cu/SnAg Double-Bump Flip-Chip Assemblies on Organic Substrates. J. Electron. Mater. 37, 1832–1842 (2008). https://doi.org/10.1007/s11664-008-0498-0

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  • DOI: https://doi.org/10.1007/s11664-008-0498-0

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