Abstract
Mg-doped AlInN grown by metalorganic chemical vapor deposition (MOCVD) was demonstrated using the postgrowth thermal treatment in nitrogen and oxygen ambients. High-resolution x-ray diffraction (HRXRD) measurements showed that the crystalline quality of AlInN depends on the indium content, which is attributed to the effect of the lattice mismatch between AlInN and GaN. Interestingly, the formation of rod-shaped AlInN, which possibly resulted from the oxidation process, was observed after the postgrowth thermal treatment in the oxygen ambient. Furthermore, an InGaN/GaN multiple-quantum-well (MQW) light-emitting diode (LED) with an AlInN cladding layer was also fabricated. We believe that Mg-doped AlInN, nearly lattice matched to GaN, could play an important role for the further development of lattice-matched AlInN/GaN device applications.
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Acknowledgements
We would like to thank Dr. J.K. Sheu for his helpful suggestions. This work was supported by the␣Advanced Optoelectronic Technology Center, National Cheng Kung University, Taiwan.
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Cheng, A., Su, Y., Lai, W. et al. Characterization of Mg-Doped AlInN Annealed in Nitrogen and Oxygen Ambients. J. Electron. Mater. 37, 1070–1075 (2008). https://doi.org/10.1007/s11664-008-0496-2
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DOI: https://doi.org/10.1007/s11664-008-0496-2