We report the growth of InN by metalorganic chemical vapor deposition on Si(111) substrates. It was found that the sharpest InN(002) x-ray diffraction peak could be achieved from the sample prepared on a complex buffer layer that consists of a low-temperature AlN, a graded Al x Ga1−x N (x = 1 → 0), and a high-temperature GaN. The resultant mobility of 275 cm2/V s thus obtained was 75% larger than that of the InN prepared on a single LT-AlN buffer layer only.
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The authors wish to thank the Minister of Economic Affair (MOEA) supported by MOEA Grants No. 96-EC-17-A-08-R7-0769.
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Huang, C., Chuang, R., Chang, S. et al. MOCVD Growth of InN on Si(111) with Various Buffer Layers. J. Electron. Mater. 37, 1054–1057 (2008). https://doi.org/10.1007/s11664-008-0475-7
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DOI: https://doi.org/10.1007/s11664-008-0475-7