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ZnO and Related Materials for Sensors and Light-Emitting Diodes

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ZnO is an attractive material for ultraviolet (UV) light emitters and detectors, and transparent thin-film transistors. It is also readily synthesized in the form of nanostructures. In this paper we discuss the fabrication of a number of ZnO thin-film and nanowire devices, including transistors, diodes, and UV and pH sensors. ZnO has been effectively used as a gas sensor material based on the near-surface modification of charge distribution with surface-absorbed species. The large surface area of the nanorods makes them attractive for gas and chemical sensing, and the ability to control their nucleation sites makes them candidates for high-density sensor arrays.

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Acknowledgements

The authors would like to thank B.P. Gila and M. F. Chisholm for their valuable collaborations. The work is partially supported by NSF (CTS-0301178, monitored by Dr. M. Burka and Dr. D. Senich), by NASA Kennedy Space Center Grant NAG 10-316 monitored by Mr. Daniel E. Fitch and NSF DMR 0400416.

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Authors and Affiliations

  1. Materials Science and Engineering, University of Florida, Gainesville, FL, 32611, USA

    S.J. Pearton, W.T. Lim, J.S. Wright, L.C. Tien, H.S. Kim & D.P. Norton

  2. Chemical Engineering, University of Florida, Gainesville, FL, 32611, USA

    H.T. Wang, B.S. Kang & F. Ren

  3. Electrical and Computer Engineering, University of Florida, Gainesville, FL, 32611, USA

    J. Jun & J. Lin

  4. SVT Associates, Eden Prairie, MN, 55344, USA

    A. Osinsky

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  1. S.J. Pearton
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Correspondence to S.J. Pearton.

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Pearton, S., Lim, W., Wright, J. et al. ZnO and Related Materials for Sensors and Light-Emitting Diodes. J. Electron. Mater. 37, 1426–1432 (2008). https://doi.org/10.1007/s11664-008-0416-5

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  • DOI: https://doi.org/10.1007/s11664-008-0416-5

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