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UV photoresponse of single ZnO nanowires

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Abstract

ZnO nanowires grown by site-selected molecular beam epitaxy (MBE) were contacted at both ends by Al/Pt/Au ohmic electrodes. The current–voltage (I–V) and photoresponse characteristics were obtained both in the dark and with ultraviolet (UV, 254 or 366 nm) illumination. The I–V characteristics are ohmic under all conditions, with nanowire conductivity under UV exposure of 0.2 Ω cm. The photoresponse showed only a minor component with long decay times (tens of seconds) thought to originate from surface states. The results show the high quality of material prepared by MBE and the promise of using ZnO nanowire structures for solar-blind UV detection.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, University of Florida, Gainesville, FL, 32611, USA

    Y.W. Heo, L.C. Tien, D.P. Norton & S.J. Pearton

  2. Department of Chemical Engineering, University of Florida, Gainesville, FL, 32611, USA

    B.S. Kang, F. Ren & J.R. La Roche

Authors
  1. Y.W. Heo
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  2. B.S. Kang
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  3. L.C. Tien
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  4. D.P. Norton
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  5. F. Ren
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  6. J.R. La Roche
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  7. S.J. Pearton
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Corresponding author

Correspondence to S.J. Pearton.

Additional information

PACS

81.05.Dz; 73.61.Ga; 72.80.Ey

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Heo, Y., Kang, B., Tien, L. et al. UV photoresponse of single ZnO nanowires. Appl. Phys. A 80, 497–499 (2005). https://doi.org/10.1007/s00339-004-3045-8

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  • DOI: https://doi.org/10.1007/s00339-004-3045-8

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