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Electromigration effects on intermetallic growth at wire-bond interfaces

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Abstract

At a bimetallic interface, excessive intermetallic growth can cause device failure. For each intermetallic phase, a direct current flowing normal to the interface can change its thickening rate, increasing the rate for current in one direction and decreasing it for the reverse direction. In this paper, we present electrical resistance measurements on single wire-bond/bond-pad interfaces under the influence of current. Resistance increases are correlated with the growth of intermetallics observed in cross section of the wire bonds, providing a sensitive probe of microstructural evolution. The form of resistance change is clearly altered under applied current and depends on polarity. The resistance changes demonstrate key aspects of the effects of electromigration on intermetallic growth, but a fully quantitative interpretation of the changes is hampered by the appearance of more than one intermetallic phase and by the development of voids.

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References

  1. N. Bertolino, J. Garay, U. Anselmi-tamburini, and Z.A. Munir, Phil. Mag. B 82, 969 (2002).

    Article  CAS  Google Scholar 

  2. C.M. Chen and S.W. Chen, J. Electron. Mater. 28, 902 (1999).

    Article  CAS  Google Scholar 

  3. C.M. Chen and S.W. Chen, J. Electron. Mater. 29, 1222 (2000).

    Article  CAS  Google Scholar 

  4. C.M. Chen and S.W. Chen, J. Appl. Phys. 90, 1208 (2001).

    Article  CAS  Google Scholar 

  5. J.R. Friedman, J.E. Garay, U. Anselmi-Tamburini, and Z.A. Munir, Intermetallics 12, 589 (2004).

    Article  CAS  Google Scholar 

  6. J.E. Garay, U. Anselmi-Tamburini, and Z.A. Munir, Acta Mater. 51, 4487 (2003).

    Article  CAS  Google Scholar 

  7. S.W. Chen, C.M. Chen, and W.C. Liu, J. Electron. Mater. 27, 1193 (1998).

    Article  CAS  Google Scholar 

  8. L. De Schepper, W. De Ceuninck, G. Leken, L. Stals, B. Vanhecke, J. Roggen, E. Beyne, and L. Tielemans, Qual. Reliab. Eng. Int. 10, 15 (1994).

    Google Scholar 

  9. B. Krabbenborg, Microelectron. Reliab. 39, 77 (1999).

    Article  Google Scholar 

  10. H.T. Orchard and A.L. Greer, Appl. Phys. Lett. 86, 231906 (2005).

    Article  CAS  Google Scholar 

  11. L. Maiocco, D. Smyers, S. Kadiyala, and I. Baker, Mater. Characterization 24, 293 (1990).

    Article  CAS  Google Scholar 

  12. H.S. Chang, H. Ker-Chang, T. Martens, and A. Yang, IEEE Trans. Compon. Packaging Technol. 27, 155 (2004).

    Article  CAS  Google Scholar 

  13. C.D. Breach and F. Wulff, Microelectron. Reliab. 44, 973 (2004).

    Article  CAS  Google Scholar 

  14. N. Noolu, N. Murdeshwar, K. Ely, J. Lippold, and W. Baeslack, J. Electron. Mater. 33, 340 (2004).

    Article  CAS  Google Scholar 

  15. N. Noolu, N. Murdeshwar, K. Ely, J. Lippold, and W. Baeslack, J. Mater. Res. 19, 1374 (2004).

    Article  CAS  Google Scholar 

  16. M. Kashiwabara and S. Hattori, Rev. Elect. Comm. Lab. 17, 1001 (1969).

    Google Scholar 

  17. L. Weber, Acta. Mater. 53, 1945 (2005).

    CAS  Google Scholar 

  18. U. Gösele and K.N. Tu, J. Appl. Phys. 53, 3252 (1982).

    Article  Google Scholar 

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Orchard, H.T., Greer, A.L. Electromigration effects on intermetallic growth at wire-bond interfaces. J. Electron. Mater. 35, 1961–1968 (2006). https://doi.org/10.1007/s11664-006-0300-0

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  • DOI: https://doi.org/10.1007/s11664-006-0300-0

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