Preliminary results of a study of the hydrogenation of HgCdTe epilayers grown by molecular beam epitaxy on Si substrates using a glow-discharge plasma are presented. The aim of the program is to employ H to passivate the detrimental opto-electronic effects of threading dislocations present in the HgCdTe epilayers. Secondary ion mass spectroscopy depth profiling has been performed to characterize 1H and 2H incorporation. It has been found that H can be controllably incorporated in HgCdTe epilayers to levels in the 1014 cm−3 to 1018 cm−3 range while maintaining the sample at temperatures lower than 60°C. Profiles indicate that H accumulates in regions of known high defect density or in highly strained regions. Analysis of the H depth profile data indicates that the current density-time product is a good figure of merit to predict the H levels in the HgCdTe epilayer. There are progressive differences in the 1H and 2H uptake efficiencies as a function of depth. Magneto-Hall measurements show consistently higher mobilities at low temperatures for majority carriers in hydrogenated samples.
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Golding, T.D., Hellmer, R., Bubulac, L. et al. Hydrogenation of HgCdTe epilayers on Si substrates using glow discharge plasma. Journal of Elec Materi 35, 1465–1469 (2006). https://doi.org/10.1007/s11664-006-0285-8
- silicon substrate
- glow discharge plasma
- molecular beam epitaxy (MBE)