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Alternative method of interface traps passivation by introducing of thin silicon nitride layer at 4H-SiC/SiO2 interface

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Abstract

An alternative approach for reduction of interface traps density at 4H-SiC/SiO2 interface is proposed. Silicon nitride / silicon oxide stack was deposited on p-type 4H-SiC (0001) epilayers and subsequently over-oxidized. The electrical characterization of the interface was done by employing metal-oxide semiconductor (MOS) devices, inversion-channel MOS devices and lateral MOS field effect transistors (MOSFETs).

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acknowledgments

The support of this work by Marie Curie ITN NetFISiC project (EC FP7 grant agreement 264613) is gratefully acknowledged.

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Authors and Affiliations

  1. Acreo Swedish ICT AB, Electrum 236, 16440, Kista, Sweden

    Aleksey I. Mikhaylov & Adolf Schöner

  2. SPbETU “LETI”, Prof. Popov st. 5, 197376, St. Petersburg, Russia

    Aleksey I. Mikhaylov, Alexey V. Afanasyev & Victor V. Luchinin

  3. Ascatron AB, Electrum 236, 16440, Kista, Sweden

    Sergey A. Reshanov & Adolf Schöner

Authors
  1. Aleksey I. Mikhaylov
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  2. Alexey V. Afanasyev
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  3. Victor V. Luchinin
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  4. Sergey A. Reshanov
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  5. Adolf Schöner
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Mikhaylov, A.I., Afanasyev, A.V., Luchinin, V.V. et al. Alternative method of interface traps passivation by introducing of thin silicon nitride layer at 4H-SiC/SiO2 interface. MRS Online Proceedings Library 1693, 174–179 (2014). https://doi.org/10.1557/opl.2014.619

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  • DOI: https://doi.org/10.1557/opl.2014.619

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