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Characterization of Electron-Induced Defects in Cu (In, Ga) Se2 Thin Films by Photoluminescence

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Abstract

CIGS thin films were irradiated with 100 or 250 keV electrons to reveal the radiation defect by analyzing PL measurement. The PL intensity decreased due to non-radiative recombination defects induced by electron irradiation. Furthermore, the intensity 0.8 eV peak of the PL spectrum was observed from CIGS films irradiated with 250 eV electrons and is said to correspond to In-antisite defects in CIGS materials. The defects can usually change into InCu-VCu complex defects combined with VCu, since the formation energy of the complex defect is lower than that of each defect. Cu interstitial defects induced by 250 keV electron irradiation would diffuse to VCu of the complex defect, whereupon the complex defect might become an In-antisite defect due to 250 keV electron irradiation.

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Authors and Affiliations

  1. Japan Aerospace Exploration Agency (JAXA), Tsukuba, 305-8505, Ibaraki, Japan

    Shirou Kawakita, Mitsuru Imaizumi & Hiroaki Kusawake

  2. Insititute of Advanced Industrial Science and Technology (AIST), Tsukuba, 305-8568, Ibaraki, Japan

    Shogo Ishizuka, Hajime Shibata & Shigeru Niki

  3. Osaka Prefecture University (OPU), Sakai, 599-8570, Osaka, Japan

    Shuichi Okuda

Authors
  1. Shirou Kawakita
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  2. Mitsuru Imaizumi
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  3. Shogo Ishizuka
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  4. Hajime Shibata
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  5. Shigeru Niki
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  6. Shuichi Okuda
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  7. Hiroaki Kusawake
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Kawakita, S., Imaizumi, M., Ishizuka, S. et al. Characterization of Electron-Induced Defects in Cu (In, Ga) Se2 Thin Films by Photoluminescence. MRS Online Proceedings Library 1771, 157–161 (2015). https://doi.org/10.1557/opl.2015.405

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  • DOI: https://doi.org/10.1557/opl.2015.405

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