Abstract
We have developed a process to grow epitaxial SrTiO3 (STO) on Si. This STO/Si substrate can then be used as a pseudo substrate for the further deposition of many other oxides that are closely lattice matched to STO. The STO is grown by molecular-beam epitaxy (MBE) with a subsequent oxide layer deposited either by MBE or sol-gel deposition. The pseudo substrate has been used to demonstrate ferroelectric devices and piezoelectric devices. Ferroelectric capacitors using epitaxial BaTiO3 (BTO) show a memory window of 0.5 V; however, the retention time for these devices is short because of the depolarization field caused by the silicon-oxide interface layer used to improve the band alignment of the BTO/Si interface. Surface acoustic wave (SAW) resonators using epitaxial Pb(Zr,Ti)O3 show excellent response with a coupling coefficient of 4.6% and a velocity of 2,844 m/s.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
F. Galasso, Structure, Properties and Preparation of Perovskite-Type Compounds (New York: Pergamon Press, 1969).
C.N.R. Roa and B. Raveau, Transition Metal Oxides (New York: VCH, 1995).
O. Auciello and S. Streiffer, eds., Proc. 13th Int. Symp. on Integrated Ferroelectrics (Basal, Switzerland: Gordon and Breach Science Publishers, 2001).
P.V. Wright, Proc. 1992 Ultrasonics Symp. (New York: IEEE, 1992), pp. 29–38.
L. Wooten et al., J. Sel. Top. Quant. Electron. 6, 69 (2000).
R. McKee, F. Walker, and M. Chisholm, Phys. Rev. Lett. 81, 3014 (1998).
W. Kern, ed., Handbook of Semiconductor Wafer Cleaning Technology: Science, Technology, and Applications (Park Ridge, NJ: Noyes Publications, 1993).
K. Eisenbeiser et al., Appl. Phys. Lett. 76, 1324 (2000).
J. Robertson and C.W. Chen, Appl. Phys. Lett. 74, 1168 (1999).
S.A. Chambers, Y. Liang, Z. Yu, R. Droopad, J. Ramdani, and K. Eisenbeiser, Appl. Phys. Lett. 77, 1662 (2000).
A.A. Talin et al., Appl. Phys. Lett. 81, 1062 (2002).
Y. Wang et al., Appl. Phys. Lett. 80, 97 (2002).
C.S. Hartiman, P.V. Wright, R.J. Kansy, and E.M. Garber, 1982 IEEE Ultrasonics Symp. Proc. (New York: IEEE, 1982), pp. 40–46.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Eisenbeiser, K., Droopad, R., Yu, Z. et al. Crystalline oxide-based devices on silicon substrates. J. Electron. Mater. 32, 868–871 (2003). https://doi.org/10.1007/s11664-003-0202-3
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/s11664-003-0202-3