Abstract
Two types of samples were applied in this wire-bond evaluation work for an Al-pad diffusion process. One was finished product for the cross-section examination of wire-bond and the other was without compound encapsulant used for the plane view examination of wire-bond interface. These samples were aged at 175 C in air from 0 h to 1008 h. It is found that the normal product which was ready on board existed ∼1 μm Au2Al and Au5Al2 phases. The Au2Al phase was then transformed to Au5Al2 phase in a 4 ∼ 72 h aging period. The Au4Al phase formed along with the Au5Al2 phase in 72 h to 240 h aging period showing some porosity within the reacted phases. The total phase thickness increased to ∼4μm after 240 h aging. The Au4Al phase became the major phase after 336 aging h. The reacted phase layer thickness increased to ∼6 μm and reached the steady state. A titanium-rich thin layer was also induced within the reacted phase layer. Three ternary phases as AlAu2Ti, AlAuTi, and Al2Au2Ti are found in this titanium-rich layer. In particular, Al2Au2Ti could be a new phase.
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References
G.G. Harman, Wire Bonding in Microelectronics: Materials, Processes, Reliability and Yield, 2nd ed. (New York: McGraw-Hill, 1997).
Alloy Phase Diagrams, Vol. 3 (Materials Park, OH:ASM Int., 1992).
E. Philofsky, Solid State Electron. 13, 1391 (1970).
M.M. Khan, and H. Fatemi, Proc. 1986 Int. Symp. on Micro-electronics (ISHM) (1986), pp. 420–427.
K. Gustafsson, and U. Lindborg, 37th Proc. ECC (1987), pp. 491–499.
R. Marazza, R. Ferro, and G. Rambaldi, J. Less-Common Metals 39, 341 (1975).
J.L. Jorda, J. Muller, H.F. Braun, and C. Susz, J. Less-Common Metals 134, 99 (1987).
E. Philofsky, Proc. IEEE Reliability Physics Symp. (Piscataway, NJ: IEEE, 1971), pp. 11–16.
E. Philofsky, Proc. IEEE Reliability Physics Symp. (Piscataway, NJ: IEEE, 1970), pp. 177–185.
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Chang, HS., Pon, J.X., Hsieh, KC. et al. Intermetallic growth of wire-bond at 175°C high temperature aging. J. Electron. Mater. 30, 1171–1177 (2001). https://doi.org/10.1007/s11664-001-0146-4
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DOI: https://doi.org/10.1007/s11664-001-0146-4