Abstract
In this work, we investigated the frictional behavior of copper CMP. Using a laboratory polishing set up, we polished Cu with designed polishing media. After that the copper surface and the fumed silica particles Cu were analyzed. The surface analysis techniques used are the field emission SEM, the field-emission high-resolution analytical TEM, x-ray spectroscopy, and XPS. We found evident difference in friction value using different polishing media. Discussions lead to three mechanisms during copper CMP. The nature of copper oxides has a profound influence on friction and might be directly related to defects.
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Argonne National Laboratory
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Liang, H., Martin, JM. & Lee, R. Influence of oxides on friction during Cu CMP. J. Electron. Mater. 30, 391–395 (2001). https://doi.org/10.1007/s11664-001-0049-4
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DOI: https://doi.org/10.1007/s11664-001-0049-4