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Dendrite growth processes of silicon and germanium from highly undercooled melts

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Abstract

The crystal growth behavior of a semiconductor from a very highly undercooled melt is expected to be different from that of a metal. In the present experiment, highly pure undoped Si and Ge were undercooled by an electromagnetic levitation method, and their crystal growth velocities (V) were measured as a function of undercooling (ΔT). The value of V increased with ΔT, and V=26 m/s was observed at ΔT=260 K for Si. This result corresponds well with the predicted value based on the dendrite growth theory. The growth behaviors of Si and Ge were found to be thermally controlled in the measured range of undercooling. The microstructures of samples solidified from undercooled liquid were investigated, and the amount of dendrites immediately after recalescence increased with undercooling. The dendrite growth was also observed by a high-speed camera.

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Authors and Affiliations

  1. the Institute of Space and Astronautical Science, 229-8510, Kanagawa, Japan

    Tomotsugu Aoyama (Graduate Student), Yuzuru Takamura (Research Associate) & Kazuhiko Kuribayashi (Professor)

Authors
  1. Tomotsugu Aoyama
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  2. Yuzuru Takamura
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  3. Kazuhiko Kuribayashi
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Aoyama, T., Takamura, Y. & Kuribayashi, K. Dendrite growth processes of silicon and germanium from highly undercooled melts. Metall Mater Trans A 30, 1333–1339 (1999). https://doi.org/10.1007/s11661-999-0282-7

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  • DOI: https://doi.org/10.1007/s11661-999-0282-7

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