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Synthesis of In2O3 Thin Films from Indium Thin Film by Hot-Water Oxidation Method

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Abstract

Radio-frequency (RF)-sputtered indium thin films were prepared and processed in ultrapure water at 368 K (95 °C) for various time durations. The processed samples were poor in crystalline quality and indexed as cubic phase for the samples processed for more than 12 hours. A rhombohedral to cubic phase was also observed. Photoluminescence (PL) and Raman spectra showed few dominant peaks at ~385, ~515, and ~675 and at ~203 and 495 cm−1 as oxygen deficient cubic In2O3 with nanostructured In2O3, respectively.

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The authors thank the Solid State Laboratory and Nano Optoelectronics Research Laboratory in the School of Physics, which has provided the RF sputtering system to coat In metal films and PL-Raman studies to perform the characterization for the prepared film, respectively.

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Authors and Affiliations

  1. Nano Optoelectronics Research Laboratory, School of Physics, Universiti Sains Malaysia (USM), 11800, Minden, Pulau Penang, Malaysia

    Subramani Shanmugan (Postdoctoral Research Fellow) & Devarajan Mutharasu (Associate Professor)

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  1. Subramani Shanmugan
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  2. Devarajan Mutharasu
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Correspondence to Subramani Shanmugan.

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Manuscript submitted August 15, 2011.

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Shanmugan, S., Mutharasu, D. Synthesis of In2O3 Thin Films from Indium Thin Film by Hot-Water Oxidation Method. Metall Mater Trans A 43, 6–9 (2012). https://doi.org/10.1007/s11661-011-1016-1

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