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Study the Effect of Changing the Etching Current in a Si Nanostructure to Improve the Spectral Sensitivity of the Detector

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Abstract

The current study used an electrochemical method to create ultra-high sensitivity photodetector silicon (Si) nanostructures. The effect of different factors on the formation of porous silicon has been studied. To change the current, an electrochemical procedure was used. Porous silicon layers were formed by using crystalline silicon p-type wafer (100) with a resistivity of 0.1–100 Ω.cm. An etching solution containing 20% HF was used at different currents of 5, 10, 15, 20, and 25 mA/cm2 in addition to 10 min. PS was demonstrated using the properties of the (J-V) and (Jph-V) in both darkness and photocurrent density. XRD broadening of PS nanostructures increased as the crystallite size decreased, with the peaks becoming widened when the crystal size was around a nanometer. The high-energy peak of the PL spectrum shifts slightly, indicating the presence of porous silicon quantum confinement effect while analyzing SEM data; it was discovered that the pores have a cylindrical shape as a result of increasing the morphological characteristics’ average diameter. As a result, it can be concluded lower PS surface reflectance when compared to bulk silicon reflectivity demonstrated by the porous silicon layer. Three peaks in responsiveness appeared. The first and second reaction peak was absorbed in the Al/PS depletion area at 450–600 nm. While the third peak absorption occurred in the PS/c-Si depletion region at 850 nm; also at 25 mA/cm2 etching current, a maximum quantum efficiency of 124.32% was observed.

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Acknowledgements

The authors would like to thank University of Baghdad, Iraq, for the logistic support to this work.

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Authors and Affiliations

  1. Department of Physics, College of Science, University of Baghdad, Baghdad, Iraq

    Zeina A. Abdul Hameed & Falah A.-H. Mutlak

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  1. Zeina A. Abdul Hameed
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  2. Falah A.-H. Mutlak
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Contributions

Z. Hameed: conceptualization, preparation samples, writing—original draft, and visualization. F. Mutlak: investigation, analysis, validation, methodology, and reviewing and editing.

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Correspondence to Falah A.-H. Mutlak.

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Hameed, Z.A.A., Mutlak, F.AH. Study the Effect of Changing the Etching Current in a Si Nanostructure to Improve the Spectral Sensitivity of the Detector. Plasmonics 19, 417–428 (2024). https://doi.org/10.1007/s11468-023-01984-w

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  • DOI: https://doi.org/10.1007/s11468-023-01984-w

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