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Coulomb Gap and Metal–Insulator–Semiconductor (MIS) Transition in ZnO/n-Ag/ZnO Film in the Plasmonic Domain

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Abstract

Silver nanoparticles were incorporated in between zinc oxide layers to realize ZnO/n-Ag/ZnO sandwich structure. Particle size and volume fraction of nanocrystalline silver particles were optimized to obtain a layer exhibiting a strong plasmonic peak even when embedded in ZnO sandwich structure. Strong surface plasmon resonance peak in the optical absorbance spectra was observed at ∼480 nm. Electrical conductivity in the temperature range of 10–200 K in the dark and when illuminated at 480 nm was studied to understand the transport processes associated with this material. The effect of surface plasmon resonance on the electron transport process was also specifically addressed in the metal–insulator–semiconductor (MIS) transition domain. The effect of additional density of states in the higher energy domain on the surface plasmon peak has been discussed and resulting broadening of the coulomb gap has been explained. Both the hopping energy (W OPT) and width of coulomb gap (Δ ES) increased in the plasmonic region.

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Acknowledgments

The authors wish to thank the Board of Research in Nuclear Sciences (BRNS), Government of India, for the financial assistance to carry out this research programme. RB wishes to thank the Jadavpur University for supporting his fellowship. The authors are thankful to Dr. M. K. Dalai and Mrs. G. Sehgal of CSIR-NPL, New Delhi, for their cooperation during the TOF-SIMS experiment. BRC would like to acknowledge the CSIR-HRDG, New Delhi, for supporting his Emeritus Scientist Project in this work.

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Authors and Affiliations

  1. Department of Instrumentation Science, Jadavpur University, USIC Building, Calcutta, 700032, India

    R. Bhunia, N. Bhadra, S. Das, R. Bhar & A. K. Pal

  2. UGC-DAE CSR, Kalpakkam Node, Kokilamedu, 603104, India

    S. Hussain

  3. CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi, 110012, India

    B. R. Chakraborty

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  1. R. Bhunia
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  2. N. Bhadra
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  3. S. Das
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  4. S. Hussain
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  5. B. R. Chakraborty
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  6. R. Bhar
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  7. A. K. Pal
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Correspondence to A. K. Pal.

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Bhunia, R., Bhadra, N., Das, S. et al. Coulomb Gap and Metal–Insulator–Semiconductor (MIS) Transition in ZnO/n-Ag/ZnO Film in the Plasmonic Domain. Plasmonics 10, 1291–1300 (2015). https://doi.org/10.1007/s11468-015-9936-z

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  • DOI: https://doi.org/10.1007/s11468-015-9936-z

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