Abstract
An AlAs layer of two or three monolayers was inserted beneath the strained InAs layer in the fabrication of InAs nanostructure on the In0.53Ga0.47As and In0.52Al0.48As buffer layer lattice-matched to InP(001) substrate using molecular beam epitaxy. The effects of AlAs insertion on the InAs nanostructures were investigated and discussed.
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Notzel R. and Haverkort J. E. M., Adv. Funct. Mater., 2006, 16: 327
Barik S., Tan H. H., and Jagadish C., Nanotechnology, 2006, 17: 1867
LaPierre R. R., Okada T., Robinson B. J., Thompson D. A., and Weatherly G. C., J. Cryst. Growth, 1995, 155: 1
Grenet G., Gendry M., Oustric M., Robach Y., Porte L., Hollinger G., Marty O., Pitaval M., and Prierster C., Appl. Surf. Sci., 1998, 123/124: 324
Brault J., Gendry M., Grenet G., Hollinger G., Desieres Y., and Benyattou T., Appl. Phys. Lett., 1998, 73: 2932
Zhao F. A., Chen Y. H., Ye X. L., Jin P., Xu B., Wang Z. G., and Zhang C. L., J. Phys.: Condens. Matter, 2004, 16: 7603
Wang X. Q., Du G. T., Yin J. Z., Li M., Li M. T., Qu Y., Bo B. X., and Yang S. R., J. Cryst. Growth, 2002, 235: 60
Kim J. S., Lee J. H., Hong S. U., Han W. S., Kwack H. S., Lee C. W., and Oh D. K., J. Cryst. Growth, 2003, 259: 252
Gong Q., Notzel R., van Veldhoven P. J., Eijkemans T. J., and Wolter J. H., Appl. Phys. Lett., 2004, 84: 275
Anatathanasarn S., Notzel R., van Veldhoven P. J., van Otten F. W. M., Eijkemans T. J., and Wolter J. H., Appl. Phys. Lett., 2006, 88: 063105
Penev E., Kratzer P., and Scheffler M., Phys. Rev. B, 2001, 64: 085401
Horikoshi Y., Semicond. Sci. Technol., 1993: 1032
Brault J., Gendry M., Grenet G., Hollinger G., Olivares J., Salem B., Benyattou T., and Bremond G., J. Appl. Phys., 2002, 92: 506
Gonzalez L., Garcia J. M., Garcia R., Briones F., and Martinez-Pastor J., Appl. Phys. Lett., 2000, 76: 1104
Li H., Daniels-Race T., and Hasan M. A., Appl. Phys. Lett., 2002, 80: 1367
Moison J. M., Houzay F., Barthe F., and Leprince L., Appl. Phys. Lett., 1994, 64: 196
Kobayashi N. P., Ramachandran T. R., Chen P., and Madhukar A., Appl. Phys. Lett., 1996, 68: 3299
Barabasi A-L, Appl. Phys. Lett., 1997, 70: 2565
Chokshi N. S. and Millunchick J. M., Appl. Phys. Lett., 2000, 76: 2382
Chokshi N., Bouviller M., and Millunchick J. M., J. Cryst. Growth, 2000, 236: 563
Shchukin V. A., Ledentsov N. N., Kopev P. S., and Bimberg D., Phys. Rev. Lett., 1995, 75: 2968
Solomon G. S., Trezza J. A., and Harris J. S., Appl. Phys. Lett., 1995, 66: 991
Saito H., Nishi K., and Sugou S., Appl. Phys. Lett., 1999, 74: 1224
Hwang H. D., Yoon S., Kwon H., Yoon E., Kim H. S., Lee J. Y., and Cho B., Appl. Phys. Lett., 2004, 85: 6383
Kratzer P., Liu Q. K. K., Acosta-Diaz P., Manzano C., Costantini G., Songmuang R., Rastelli A., Schmidt O. G., and Kern K., Phys. Rev. B, 2006, 73: 205347
Schmidt K. H., Medeiros-Ribeiro G., Kunze U., Abstreiter G., Hagn M., and Petroff P. M., J. Appl. Phys., 1998, 84: 4268
Chou S. T., Cheng K. Y., Chou L. J., and Hsieh K. C., Appl. Phys. Lett., 1995, 66: 2220
Mirecky J. M., Twesten R. D., Follstaedt D. M., Lee S. R., Jones E. D., Zhang Y., Ahrenkiel S. P., and Mascrenhas A., Appl. Phys. Lett., 1997, 70: 1402
Francoeur S., Norman A. G., Hanna M. C., Mascarenhas A., Reno J. L., Follstaedt D. M., and Lee S. R., Mater. Sci. and Eng. B, 2002, 88: 118
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Lü, Xj., Wu, J., Xu, B. et al. InAs nanostructures on InP (001) substrate with the insertion of a superthin AlAs layer. Front. Phys. China 2, 440–445 (2007). https://doi.org/10.1007/s11467-007-0055-y
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DOI: https://doi.org/10.1007/s11467-007-0055-y