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MBE growth of high absorption mid-IR type-II InAs/GaSb superlattices

  • Letter
  • Materials Science
  • Published:
Chinese Science Bulletin

Abstract

Two kinds of short-period type II superlattices (SLs) InAs (6 monolayers (MLs))/GaSb (3 MLs) and InAs (8 MLs)/GaSb (8 MLs) which can serve for mid-infrared (MIR) detection have been grown by molecular beam epitaxy (MBE) on p-type GaSb (100) substrates. The cutoff wavelength for the two superlattices (SLs) was found to be around 4.8 µm at 300 K. The high resolution X-ray diffraction (HRXRD) measurements indicated that the InAs (8 MLs)/GaSb (8 MLs) SLs have better crystalline quality than that of the InAs (6 MLs)/GaSb (3 MLs) SLs. However, compared with infrared absorption in the 2.5–4.3 µm range, the optical absorption of InAs (6 MLs)/GaSb (3 MLs) SLs was more excellent. This can be attributed to increase probability of the electron and hole wave function overlap in the thinner period thickness.

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Acknowledgements

This work was supported by the National High Technology Research and Development Program of China (2011AA03A112, 2011AA03A106 and 2013AA03A101), the National Natural Science Foundation of China (11204360, 61210014), the Science & Technology Innovation Program of Guangdong Provincial Department of Education of China (2012CXZD0017), the Industry-Academia-Research Union Special Fund of Guangdong Province of China (2012B091000169), and the Science & Technology Innovation Platform of Industry-Academia-Research Union of Guangdong Province-Ministry Cooperation Special Fund of China (2012B090600038).

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Authors and Affiliations

  1. Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou, 510631, China

    Geng Wang, Yulong Chen, Miao He, Pingyuan Lu & Weining Qian

  2. Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condense Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China

    Geng Wang, Lu Wang, Hong Chen, Wenxin Wang & Zhenwu Shi

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  1. Geng Wang
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  2. Lu Wang
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  3. Hong Chen
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  4. Wenxin Wang
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  5. Zhenwu Shi
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  6. Yulong Chen
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  7. Miao He
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  8. Pingyuan Lu
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  9. Weining Qian
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Corresponding authors

Correspondence to Hong Chen or Miao He.

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Wang, G., Wang, L., Chen, H. et al. MBE growth of high absorption mid-IR type-II InAs/GaSb superlattices. Chin. Sci. Bull. 59, 2383–2386 (2014). https://doi.org/10.1007/s11434-014-0424-1

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  • DOI: https://doi.org/10.1007/s11434-014-0424-1

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