Abstract
We have fabricated InGaN-based superluminescent diodes (SLDs) with one-sided oblique facet. The characteristics of the SLDs and laser diodes with the same cavity length (800 μm) were compared. The typical peak wavelength and the full width at half maximum of the spectrum in superluminescence regime are 445.3 and 7.7 nm for the SLDs with 800 μm cavity length. The characteristics of the SLDs with different cavity length were also demonstrated in a comparative way. It is found that the gain of the InGaN multi-quantum wells in blue spectral range is a linear function of the current density below gain saturation region. The lasing threshold current turns out to be higher for the shorter SLD (S-SLD) (400 μm), but the output light intensity of the longer SLD (800 μm) is higher than that of the S-SLD under the same current density. The gain saturation phenomenon was observed in S-SLD when it was biased at a current density larger than 27.5 kA/cm2. The increase of junction temperature was identified as the main reason for gain saturation through spectra analysis.
Similar content being viewed by others
References
Peter M, Engl K, Baumann F et al (2010) Recent progress in high efficiency InGaN LEDs. In: Lasers and Electro-Optics and Quantum Electronics and Laser Science Conference, San Jose, CA, USA, 16–21 May, 2010. IEEE, pp 1–2
Samonji K, Yoshida S, Hagino H et al (2012) High-power operation of wide-striped InGaN laser diode array. Proc SPIE 8277. doi:10.1117/12.907936
Weissleder R (2002) Scaling down imaging: molecular mapping of cancer in mice. Nat Rev Cancer 2:11–18
Rossetti M, Napierala J, Matuschek N et al (2012) Superluminescent light emitting diodes: the best out of two worlds. Proc SPIE 8252. doi:10.1117/12.912759
Feltin E, Castiglia A, Cosendey G et al (2009) Broadband blue superluminescent light-emitting diodes based on GaN. Appl Phys Lett 95:081107
Hardy MT, Kelchner KM, Lin YD et al (2009) M-plane GaN-based blue superluminescent diodes fabricated using selective chemical wet etching. Appl Phys Express 2:1004
Acknowledgments
This work was supported by the National Natural Science Foundation of China (61334005, 60836003, 61006084, 61076119, 60976045 and 61176125), and the “Strategic Priority Research Program” of the Chinese Academy of Sciences (XDA09020401).
Author information
Authors and Affiliations
Corresponding author
About this article
Cite this article
Zeng, C., Zhang, S., Liu, J. et al. Characteristics of InGaN-based superluminescent diodes with one-sided oblique cavity facet. Chin. Sci. Bull. 59, 1903–1906 (2014). https://doi.org/10.1007/s11434-014-0223-8
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11434-014-0223-8