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Di-electrophoresis assembly and fabrication of SWCNT field-effect transistor

  • Articles / Mechanical Engineering
  • Published:
Chinese Science Bulletin

Abstract

In the process of fabricating nano electrical device or system based on single-walled carbon nanotube (SWCNT), the controllable assembly and fabrication of SWCNT field-effect transistor (SWCNT FET) is a key issue. SWCNT FET is the most basic and important component in nano electronics. After microelectrode chip of back-gate FET is designed and fabricated, di-electrophoresis technology is adopted to realize the controllable alignment and assembly of SWCNTs, based on dispersing SWCNT by sodium dodecyl sulphate (SDS) facilitated ultra-sonication technique and removing impurities by centrifugal technique. The experiments of SWCNTs assembly demonstrate that SWCNTs are aligned and assembled uniformly at the microelectrodes gap with the alignment density nearly proportional to di-electrophoresis duration and solution concentration. After the processes of rinsing, drying and improving, metallic SWCNTs among the assembled SWCNTs are burned out and residual SDS is removed, and perfect field-effect performance of SWCNT FET is eventually obtained.

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Authors and Affiliations

  1. State Key Laboratory of Robotics, Shenyang Institute of Automation, Chinese Academy of Sciences, Shenyang, 110016, China

    XiaoJun Tian, YueChao Wang, HaiBo Yu, ZaiLi Dong & Ning Xi

  2. Department of Mechanical Engineering, University of Arkansas, Fayetteville, AR, 72701, USA

    Steve Tung

Authors
  1. XiaoJun Tian
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  2. YueChao Wang
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  3. HaiBo Yu
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  4. ZaiLi Dong
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  5. Ning Xi
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  6. Steve Tung
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Corresponding author

Correspondence to XiaoJun Tian.

Additional information

Supported by the National High-Tech Research & Development Program of China (Grant No. 2006AA04Z320), and Kwan-cheng Wong Research Fellowship, Chinese Academy of Sciences, China

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Tian, X., Wang, Y., Yu, H. et al. Di-electrophoresis assembly and fabrication of SWCNT field-effect transistor. Chin. Sci. Bull. 54, 4451–4457 (2009). https://doi.org/10.1007/s11434-009-0206-3

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  • DOI: https://doi.org/10.1007/s11434-009-0206-3

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